L波段350 W AlGaN/GaN HEMT器件研制  

Research and Fabrication of L-Band 350 W AlGaN/GaN HEMT

作　　者：张力江[1,2] 默江辉[3] 崔玉兴[2] 付兴昌[2] 李献杰[2] 张彤[1] Zhang Lijiang;Mo Jianghui;Cui Yuxing;Fu Xingchang;Li Xianjie;Zhang Tong(School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China;The 13^th Research Institute, CETC, Shijiazhuang 050051, China;Science and Technology on ASIC Laboratory, Shijiazhuang 050051, China)

机构地区：[1]东南大学电子科学与技术学院,南京210096 [2]中国电子科技集团公司第十三研究所,石家庄050051 [3]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2018年第6期437-442,共6页Semiconductor Technology

基　　金：国家重点研发计划资助项目(2016YFB0400303)

摘　　要：基于高纯半绝缘碳化硅衬底,采用金属有机化学气相沉积（MOCVD）工艺生长了AlGaN/GaN高电子迁移率晶体管（HEMT）外延材料。室温下霍尔测试结果表明,外延层二维电子气迁移率为1 950 cm^2/（V·s）,方块电阻为350Ω,电阻均匀性为3%。通过优化工艺降低了欧姆接触电阻,提高了器件工作效率。采用源场板结合栅场板的双场板技术和增大源漏间距,提高了器件击穿电压。优化了背面减薄和背面通孔技术,提高了器件散热能力。采用阻抗匹配技术提升了芯片阻抗。最终采用预匹配技术和金属陶瓷封装技术成功制作50 mm栅宽的AlGaN/GaN HEMT器件。直流测试结果表明,器件击穿电压高达175 V。微波测试结果表明,在50 V工作电压、1.3 GHz下,器件输出功率达350 W,功率附加效率达81%,功率增益大于13 d B。The AlGaN/GaN high electron mobolity transistor（ HEMT） epitaxial material was grown on the high purity semi insulating silicon carbide substrate by metal-organic chemical vapor deposition（ MOCVD） process. The Hall tests results at room temperature show that the mobility of two-dimensional electron gas of the epitaxial leyer is 1 950 cm^2/（ V·s）,the square resistance is 350 Ω and the uniformity is 3%. The ohmic contact resistance was reduced by optimizing the process to increase the device working efficiency. The breakdown voltage of the device was improved by using double field plates（ source field plate and gate field plate） technology and increasing the distance between drain and source electrode,and the backside thinning and backside hole technology were optimized to improve the heat dissipation capacity of the device. Impedance of chip was improved by impedance matching technology.50 mm gate width AlGaN/GaN HEMT device was fabricated by the pre-matching technique and metal ceramic packaging technology. The DC testing results show that the breakdown voltage of the device is up to 175 V. The microwave testing results show that the device exhibits the output power of 350 W,power added efficiency of 81% and power gain of more than 13 dB at 1. 3 GHz and the operating voltage of 50 V.

关 键 词：AlGaN/GaN高电子迁移率晶体管(HEMT) L波段 大功率 高效率 场板 

分 类 号：TN304.23[电子电信—物理电子学] TN386