Formation of a monolayer h-BN nanomesh on Rh (111) studied using in-situ STM  

作　　者：GuoCai Dong Yi Zhang Joost W. M. Frenken 

机构地区：[1]Kamerlingh Onnes Laboratory, Leiden University, Leiden 2300 RA, The Netherlands [2]National Laboratory of Solid State Microstructure, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China [3]Jiangnan Graphene Research Institute, Changzhou 213000, China [4]Advanced Research Center of Nanolithography, Amsterdam 1098 XG, The Netherlands

出　　处：《Science China(Physics,Mechanics & Astronomy)》2018年第7期61-66,共6页中国科学：物理学、力学、天文学（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.51402026,11774154,and 11790311);the Program for High-Level Entrepreneurial and Innovative Talents Introduction,Jiangsu Province,the Basic Research Program of Jiangsu Province(Grant No.BK20130236);the National Key Research and Development Plan(Grant No.2016YFE0125200)

摘　　要：As a member of the 2 D family of materials, h-BN is an intrinsic insulator and could be employed as a dielectric or insulating inter-layer in ultra-thin devices. Monolayer h-BN can be synthesized on Rh(111) surfaces using borazine as a precursor. Using in-situ variable-temperature scanning tunneling microscopy(STM), we directly observed the formation of h-BN in real-time. By analyzing the deposition under variable substrate temperatures and the filling rate of the h-BN overlayer vacant hollows during growth, we studied the growth kinetics of how the borazine molecules construct the h-BN overlayer grown on the Rh surface.As a member of the 2D family of materials, h-BN is an intrinsic insulator and could be employed as a dielectric or insulating inter-layer in ultra-thin devices. Monolayer h-BN can be synthesized on Rh （111） surfaces using borazine as a precursor. Using in-situ variable-temperature scanning tunneling microscopy （STM）, we directly observed the formation of h-BN in real-time. By analyzing the deposition under variable substrate temperatures and the filling rate of the h-BN overlayer vacant hollows during growth, we studied the growth kinetics of how the borazine molecules construct the h-BN overlayer grown on the Rh surface.

关 键 词：hexagonal boron nitride STM NANOMESH 

分 类 号：TB383.1[一般工业技术—材料科学与工程]