再生处理抑制单晶硅太阳电池光致衰减效应的研究  

STUDY OF RESTRAINING LIGHT-INDUCED DECAY EFFECT OF MONO CRYSTALLINE SILICON SOLAR CELL BY REGENERATION TREATMENT

作　　者：张三洋 沈鸿烈[1] 魏青竹 倪志春 李金泽[1] 杨家乐[1] Zhang Sanyang;Shen Honglie;Wei Qingzhu;Ni Zhichun;Li Jinze;Yang Jiale(College of Materials Science ＆ Technology, Jiangsu Key Laboratory of Materials and Technology for Energy Conversion, Nanjing University of Aeronautics ＆ Astronautics, Nanjing 210016, China;Research and Development Department, Zhongli Talesun Solar Co., Ltd., Changshu 215542, China)

机构地区：[1]南京航空航天大学材料科学与技术学院、江苏省能量转换材料与技术重点实验室,南京210016 [2]中利腾晖光伏科技有限公司研发部,常熟215542

出　　处：《太阳能学报》2018年第6期1625-1629,共5页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金(61176062);江苏省前瞻性联合创新项目(BY2013003-08);江苏高校优势学科建设工程;中央高校基本科研业务费(3082015NJ20150024)

摘　　要：掺硼晶硅电池经过长时间光照后电池效率会出现明显的衰减。针对此问题,研究再生处理对晶硅电池光致衰减效应的影响。将SiNx/Al2O3寿命片和单晶钝化发射极和背局域接触（PERC）电池片在400 W/m^2光照下200℃保温10 min进行再生处理,结果发现未经再生处理的寿命片光照1710 min后少子寿命衰减率为63.33%,电池效率衰减率为4.32%,再生处理后样品的衰减率分别降低至5%和0.48%,表明再生处理能有效抑制晶硅电池的光致衰减效应。未经再生处理的寿命片光照前后硼氧（B-O）复合体浓度分别为1.38×10^11和7.01×10^11cm^-3,再生处理后的B-O复合体浓度分别为2.90×10^10和4.44×10^10cm^-3,再生处理后的寿命片光照后B-O复合体的浓度较处理前低一个数量级,且处于稳定的不会造成少子复合的再生状态。The efficiency of boron doped crystalline silicon cells will decrease seriously after long time illumination. Inorder to avoid the problem,the influence of regeneration treatment on light induced decay effect was studied. SiNx/Al2O3 lifetime wafers and mono-crystalline silicon PERC（passivation emitter rear contact）cells were regenerated at 200 ℃ for10 minutes under 400 W/m^2 light illumination. The results show that the minority carrier lifetime decay rate of thelifetime wafers without regeneration treatment is 63.33% after illumination for 1710 min,the cell efficiency decay rate is4.32%,the decay rates of the samples with regeneration treatment are decreased to 5% and 0.48%,respectively,whichmeans regeneration treatment can effectively restrain the light induced decay effect of crystalline silicon solar cells.Before and after light illumination,B-O complex concentrations of lifetime wafer without regeneration treatment are1.38×10^11 and 7.01×10^11 cm^-3,while B-O complex concentrations of lifetime wafer with regeneration treatment are2.90×10^10 and 4.44×10^10 cm^-3. After light illumination,the B-O complex concentration of lifetime wafer with regenerationtreatment is decreased one order of magnitude than before regeneration treatment,and it is in a relatively stableregeneration state and will not result in the recombination of the minority carrier.

关 键 词：晶硅太阳电池 光致衰减效应 再生处理 少子寿命 

分 类 号：TB43[一般工业技术]