基于SOI的E型结构MEMS高温压力传感器的设计  

Design of SOI-MEMS High Temperature Pressure Sensor Based on E-type Structure

作　　者：李鑫[1] 梁庭[1] 赵丹 姚宗[1] 雷程[1] 李旺旺[1] LI Xin,LIANG Ting,ZHAO Dan,YAO Zong,LEI Cheng,LI Wang-wang(North University of China,Key Laboratory of Instrumentation Science ＆ Dynamic Measurement,Ministry of Education,Science and Technology on Electronic Test ＆ Measurement Laboratory,Taiyuan 030051,Chin)

机构地区：[1]中北大学仪器科学与动态测试教育部重点实验室电子测试技术国防科技重点实验室,山西太原030051

出　　处：《仪表技术与传感器》2018年第5期1-4,共4页Instrument Technique and Sensor

基　　金：国家自然科学基金(51405454)

摘　　要：文中设计了一种基于SOI材料的E型结构MEMS压阻式高温压力敏感芯片。E型结构与传统的C型膜结构相比解决了由于过载压力所导致的传感器灵敏度与线性输出无法同时满足工程需求的问题。在设计方面,先通过经典薄板理论得到敏感C型膜的优化参数,再结合ansys workbench有限元分析软件进而得到E型结构的大小并模拟E型结构的力学性能;设计电阻的形状以及排列位置并通过仿真分析得到最佳的电阻布置,介绍了E型结构MEMS压力传感器的加工工艺,设计的传感器满量程输出为993 mV,可实现对量程8 MPa压力的测量。The article designed a kind of MEMS piezoresistive type high temperature pressure sensitive chips of E-type structure based on SOI material.E-type structure comparing with the traditional C-type square membrane structure can solve the problem that sensor sensitivity and linear output cannot be used at the same time due to overload pressure.Sensitive membrane of optimized parameters were received by the classical thin plate theory after that the the size of E-type structure was got combining with finite element analysis software named ansys workbench and simulated the mechanic performance of the E-type stucture in the acsept of designing.The best position arrangement was gotten by means of designing the shape of resistance,and introduced the processing technology of MEMS pressure sensor based on the E-type structure,the voltage output of the designed sensor can achieve 993 mv in a full range,which can realize measurement of 8 MPa pressure range.

关 键 词：灵敏度 E型结构 压力传感器 有限元分析 线性输出 加工工艺 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]