高灵敏度Sb基量子阱2DEG的霍尔器件（英文）  

Highly-sensitive Sb-based Quantum-well 2DEG-Hall Device

作　　者：武利翻 苗瑞霞 商世广 WU Li-fan, MIAO Rui-xia, SHANG Shi-guang(School of Electronic Engineering,Xi＇an University of Posts and Telecommunications, Xi＇an 710121, Chin)

机构地区：[1]西安邮电大学电子工程学院,陕西西安710121

出　　处：《发光学报》2018年第5期687-691,共5页Chinese Journal of Luminescence

基　　金：Supported by National Natural Science Foundation of China(51302215);Scientific Research Program Funded by Shaanxi Provincial Education Department(17JK0698);The Science and Technology Project of Shaanxi Province(2016KRM029)~~

摘　　要：用分子束外延技术将高灵敏度的In As/Al Sb量子阱结构的Hall器件赝配生长在Ga As衬底上。设计了由双δ掺杂构成的Hall器件的新结构,有效地提高了器件的面电子浓度。与传统的没有掺杂的In As/Al Sb量子阱结构的Hall器件相比,室温下器件电子迁移率从15 000 cm^2·V^(-1)·s^(-1)提高到16 000 cm^2·V^(-1)·s^(-1)。AFM测试表明材料有好的表面形态和结晶质量。从77 K到300 K对Hall器件进行霍尔测试,结果显示器件不同温度范围有不同散射机构。双δ掺杂结构形成高灵敏度、高二维电子气(2DEG)浓度的In As/Al Sb异质结Hall器件具有广阔的应用前景。The highly sensitive Hall device made of In As/Al Sb quantum-well structures pseudomorphically grown on the Ga As substrate by molecular beam epitaxy has been developed.The advanced In As/Al Sb Hall device includes doubleδ-doped layers,which significantly elevate the sheet electron density.Moreover,electron mobility is increased from 15 000 cm2·V-1·s-1to 16 000 cm2·V·-1·s-1at room temperature,compared with that of an unintentionally doped Al Sb/In As Hall device.AFM measurement results show a smooth surface morphology and high crystalline quality of the samples.The quantum Hall device can be operated in the temperature ranging from 77 K to 300 K.Hall measurements show different scattering mechanism on electron mobility at temperature range.The advanced highly-sensitive In As/Al Sb heterostructure two-dimensional electron gases（2DEG）Hall device including doubleδ-doped layers is promising in near future.

关 键 词：霍尔器件 量子阱 双δ掺杂 分子束外延 

分 类 号：TN305[电子电信—物理电子学] TN382