TMAH湿法腐蚀工艺制备微台面结构  

Preparation of Micro-Mesa Structure Using TMAH Wet Etching Process

作　　者：任霄峰 Ren Xiaofeng(The 13^th Research Institute, CETC, Shijiazhuang 050051, China)

机构地区：[1]中国电子科技集团公司第十三研究所

出　　处：《微纳电子技术》2018年第7期526-531,共6页Micronanoelectronic Technology

摘　　要：针对目前四甲基氢氧化铵（TMAH）湿法腐蚀工艺制备微台面结构工艺可控性差、需要添加添加剂、溶液使用周期短及工艺维护繁琐、无法实现大尺寸晶圆工程化应用等问题,研究了无添加剂时,微台面的腐蚀形貌与TMAH溶液质量分数和循环速率之间的关系,提升了大尺寸晶圆凸角腐蚀尺寸的均匀性及表面质量,6英寸（1英寸=2.54 cm）硅晶圆内,凸角腐蚀尺寸不均匀性小于5%,台面高度不均匀性小于3%,且腔体底部平整光亮,腐蚀速率较快,实现了工程化应用。当TMAH溶液pH值为12.2-12.6时,微台面结构制备工艺稳定可控、维护简单,实现了高质量微台面结构的可批量化生产。For the problems of the poor process controllability of micro-mesa structure prepared by tetramethylammonium hydroxide（TMAH）wet etching process,needing additives,short period of use for solution and tedious process maintenance,it is unable to realize the engineering application of large size wafers.The relationships among the corrosion morphology of micro-mesa structure,the mass fraction and cycle rate of TMAH solution without additives were studied.The uniformity of corrosion size of convex corner and the surface quality for large size wafers are improved.On the 6 inches（1 inch=2.54 cm）silicon wafer,the non-uniformity of corrosion size of convex corner and the non-uniformity of mesa height are less than 5% and 3%,respectively.The bottom surface of the cavity is flat,and the corrosion rate is rapid,realizing the engineering application.When the pH value of the TMAH solution is 12.2-12.6,the preparation process of the micro-mesa structure is stable and controllable with simple maintenance,and the mass production of high quality micro-mesa structures can be realized.

关 键 词：四甲基氢氧化铵(TMAH) 湿法腐蚀 微台面结构 凸角 黑点 循环速率 不均匀性 

分 类 号：TN305.2[电子电信—物理电子学]