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作 者:李志青[1] 李冉 杜涛 LI Zhiqing;LI Ran;DU Tao;Tianjin(Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, Tianjin University, Tianjin 300354, Chin)
机构地区:[1]天津大学理学院、天津市低维功能材料物理与制备技术重点实验室,天津300350
出 处:《低温物理学报》2018年第2期34-39,共6页Low Temperature Physical Letters
摘 要:本文研究了掺杂杂质对Sn_(1-x)Mn_xO_2多晶样品的影响.实验发现,当Sn_(1-x)Mn_xO_2中掺入+2价的Cu离子时体系的铁磁性增强,此时样品仍为绝缘体.而当Sn_(1-x)Mn_xO_2中掺入Sb元素时其铁磁性减弱,并且当Sb的掺杂量达到0.04时样品Sn_(0.97-z)Mn_(0.03)Sb_zO_2的电阻率显著下降.实验结果表明,自由移动的载流子会破坏样品的铁磁性,束缚极化子可能是Mn掺杂SnO_2样品产生铁磁耦合的主要原因.The effect of additional doping of charge impurities in Sn1-xMnxO2 polycrystalline samples was investigated. It was found that the doping of copper with valence of + 2 brought significantly enhancement of the ferromagnetism in Sn1-xMnxO2 , while the samples kept electrically insulating as well. On the other hand, the ferromagnetism was suppressed due to Sb doping, and the resistivity decreased drastically when Sb concentration increases up to 0.04 in Sn(0.97-z)Mn(0.03)SbzO2. The observation suggests that the mobile charge carriers are the destroyer of the ferromagnetism and the bound magnetic polarons may be the origin of the ferromagnetic coupling in Mwdoped SnO2.
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