L波段四通道发射电路芯片的设计与实现  

Design and Implement of the L-Band Four-Channel Transmitter Circuit Chip

作　　者：王鑫华[1] 陈明辉[1] 杨格亮 Wang Xinhua;Chen Minghui;Yang Geliang(The 54th Research Institute, CETC , Shijiazhuang 050081, China)

机构地区：[1]中国电子科技集团公司第五十四研究所

出　　处：《半导体技术》2018年第7期504-509,共6页Semiconductor Technology

基　　金：河北省自然科学基金和重点基础研究专项资助项目(18960202D)

摘　　要：基于有源相控阵雷达的应用,设计了一款四通道的发射芯片,适用于发射1.2-1.4 GHz的射频信号。电路设计采用直接上变频的结构,将低频的基带信号转换为射频信号。针对直接上变频输出谐波多和输出功率低的问题,采用高阶滤波器、窄带选频网络的双平衡混频器和多级可调电压增益放大器（VGA）并联形式的驱动放大器等技术,降低了输出谐波的幅度并提高输出功率。电路采用SMIC 0.13μm CMOS工艺进行了设计仿真和流片,芯片面积为3.6 mm×3.4 mm。测试结果表明,四通道直接上变频发射芯片的发射功率可达15.4 dBm,动态增益不小于36.3 dB,通道隔离度不小于43.3 dB。芯片的功耗为837.6 mW。Based on the application of the active phased array radar,a four-channel transmitter chip was designed for transmitting 1. 2-1. 4 GHz RF signals. A direct up-conversion structure was used to convert the low-frequency baseband signal to RF signal. For the problems of much direct up-conversion output harmonic and low output power,some techniques such as high-order filters,double-balanced mixers with narrow-band frequency-selective networks and driving amplifiers in parallel with multilevel adjustable voltage gain amplifier（ VGA） were used to reduce the amplitude of the output harmonic and increase output power. The circuit was designed,simulated and fabricated based on the SMIC 0. 13 μm CMOS process with a chip area of 3. 6 mm×3. 4 mm. The test results show that the transmitting power of the four-channel direct up-conversion transmitter chip can reach 15. 4 dBm,the dynamic gain is not less than 36. 3 dB and the channel isolation is not less than 43. 3 dB. The power consumption of the chip is 837. 6 mW.

关 键 词：发射芯片 直接上变频 有源RC滤波器 双平衡混频器 四通道 CMOS工艺 

分 类 号：TN43[电子电信—微电子学与固体电子学]