P波段1500W GaN功率管设计  

Design of 1 500 W P-band GaN Power Transistor

作　　者：王琪 王建浩[1] 陈韬[1] 杨建 李相光[1] 周书同 WANG Qi;WANG Jianhao;CHEN Tao;YANG Jian;LI Xiangguang;ZHOU Shutong(Nanjing Electronic Devices Institute, Nanjing, 210016, CHN)

机构地区：[1]南京电子器件研究所,南京210016

出　　处：《固体电子学研究与进展》2018年第3期168-172,共5页Research & Progress of SSE

摘　　要：报道了一款高功率高效率的GaN功率管及其匹配电路的设计与实现。功率管内部采用预匹配设计,外部电路采用同轴巴伦线和推挽电路来匹配。测试结果表明,在415~485MHz、工作电压50V、工作脉宽300μs,工作比10%的条件下,全带内实现1 500 W输出,附加效率大于71%,器件抗驻波比大于5∶1。In this paper,design and fabrication of a high power and high efficiency GaN power transistor with matching circuit was reported.A pre-matching network was used in the transistor,while the balun and push-pull circuit were used in the input and output matching network.The test results of the transistor show an output power more than 1 500 Wand a power added efficiency more than 71% in the band of 415 MHz to 485 MHz under the conditions of 50 V working voltage,300μs pulse width and 10% duty cycle.The device is stable under RF mismatch test with VSWR5∶1.

关 键 词：GaN功率管 P波段 高功率 高效率 

分 类 号：TN303[电子电信—物理电子学]