等离子体循环刻蚀镀膜提高锆膜的水气阻隔性  

Improvement of Water Vapor Barrier Property of Zirconium Film by Plasma Cyclic Etching Coating

作　　者：刘际伟[1] 高毅[1] 刘洋[2] Liu Jiwei;Gao Yi;Liu Yang(China Academy of Engineering Physics, Mianyang 621900, China;Southwest University of Science and Technology, Mianyang 621010, China)

机构地区：[1]中国工程物理研究院,四川绵阳621900 [2]西南科技大学,四川绵阳621010

出　　处：《稀有金属材料与工程》2018年第6期1916-1920,共5页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(11505145)

摘　　要：为了提高以锆金属镀层封闭聚氨酯泡沫塑料表面对水气的阻隔性,采用了等离子体循环刻蚀和中频磁控溅射镀膜相结合的方法改变锆膜晶粒的生长模式。结果表明,等离子体循环刻蚀以后,锆膜表面的晶粒呈现出非晶化趋势,无等离子体循环刻蚀时锆膜横截面晶粒的生长方式是法向柱状晶模式,而刻蚀后薄膜呈现的是一种柱状晶和细小球晶团的混合生长模式。水气阻隔实验表明,等离子体循环刻蚀的方法可明显提高锆膜的水气阻隔性。等离子体循环刻蚀抑制了锆膜的法向柱状晶生长,使晶粒更加细化,膜呈现非晶化趋势,这是膜致密性、水气阻隔性增加的根本原因。In order to improve the water vapor barrier property of the zirconium film adhered to the rigid polyurethane foam plastics, method of combining the plasma cycle etching with the middle frequency magnetron sputtering technique was proposed to change th growth mode of zirconium crystal grains. The results show that the grains on the surface of the zirconium film exhibit a non-crystallizatio tendency after plasma cycle etching. A normal columnar crystal is found in the cross-sectional morphology of the non-etched sample, but hybrid of columnar crystals and small groups of spherulites is observed in the etched sample. The water vapor barrier properties o zirconium films can be improved by the ion source cyclic etching. The normal columnar crystal growth of the zirconium film is inhibite by cyclic etching, refining the crystal grains, and the film shows a tendency of amorphization, which is considered to be the fundamenta reason for the increase in film compactness and the improvement of the water vapor barrier property.

关 键 词：锆膜 等离子体刻蚀 非晶化 水气阻隔 

分 类 号：TB37[一般工业技术—材料科学与工程]