Influence of Triangle Structure Defect on the Carrier Lifetime of the 4H-SiC Ultra-Thick Epilayer  

作　　者：钮应喜 汤晓燕 贾仁需 桑玲 胡继超 杨霏 吴军民 潘艳 张玉明 

机构地区：[1]School of Microelectronics, Xidian University, the State Key Laboratory of Wide Band Gap Semiconductor Technology [2]State Key Laboratory of Advanced Power Transmission Technology, Global Energy Interconnection Research Institute [3]Department of Electronic Engineering, Xi'an University of Technology

出　　处：《Chinese Physics Letters》2018年第7期77-80,共4页中国物理快报（英文版）

基　　金：Supported by the National Key Research and Development Program of China under Grant No 2016YFB0400500

摘　　要：Effect of triangle structure defects in a 180-μm-thick as-grown n-type 4H-SiC homoepitaxial layer on the carrier lifetime is quantitatively analyzed, which is grown by a horizontal hot-wall chemical vapor deposition reactor.By microwave photoconductivity decay lifetime measurements and photoluminescence measurements, the results show that the average carrier lifetime of as-grown epilayer across the whole wafer is 2.59μs, while it is no more than 1.34μs near a triangle defect（TD）. The scanning transmission electron microscope results show that the triangle structure defects have originated from 3C-SiC polytype and various types of as-grown stacking faults.Compared with the as-grown stacking faults, the 3C-SiC polytype has a great impact on the lifetime. The reduction of TD is essential to increasing the carrier lifetime of the as-grown thick epilayer.Effect of triangle structure defects in a 180-μm-thick as-grown n-type 4H-SiC homoepitaxial layer on the carrier lifetime is quantitatively analyzed, which is grown by a horizontal hot-wall chemical vapor deposition reactor.By microwave photoconductivity decay lifetime measurements and photoluminescence measurements, the results show that the average carrier lifetime of as-grown epilayer across the whole wafer is 2.59μs, while it is no more than 1.34μs near a triangle defect（TD）. The scanning transmission electron microscope results show that the triangle structure defects have originated from 3C-SiC polytype and various types of as-grown stacking faults.Compared with the as-grown stacking faults, the 3C-SiC polytype has a great impact on the lifetime. The reduction of TD is essential to increasing the carrier lifetime of the as-grown thick epilayer.

分 类 号：O473[理学—半导体物理]