RF MEMS开关的静电斥力驱动研究  

Research on electrostatic repulsion actuating of RF MEMS switch

作　　者：李梁 赵清华[2] 于洋[2] LI Liang;ZHAO Qing-hua;YU Yang(Management Department,Taiyuan Normal University,Jinzhong 030619,China;College of Information Engineering,Taiyuan University of Technology,Taiyuan 030024,China)

机构地区：[1]太原师范学院管理系,山西晋中030619 [2]太原理工大学信息工程学院,山西太原030024

出　　处：《传感器与微系统》2018年第7期15-17,21,共4页Transducer and Microsystem Technologies

基　　金：国家自然科学青年基金资助项目(51505324);山西省国际科技合作计划项目(2013-036)

摘　　要：针对射频微机电系统(RF MEMS)开关工作时因介质充电而发生"粘连"失效的问题,提出了利用静电斥力驱动替代传统的静电引力驱动方式,使RF MEMS开关在工作时介质层不存在电势差,从根源上消除介质充电。通过COMSOL仿真软件,分析了静电斥力的产生机理,重点探究了静电斥力驱动结构中尺寸参数对可动极板位移的影响,并通过结构优化有效降低了驱动电压,为开关后续设计提供了参考。Radio frequency micro-electro-mechanical systems （RF MEMS）switch is usually driven by electrostatic attraction force,which will produce a high electric field within the dielectric layer. The high electric field will cause large number of electrons and holes to be injected and captured by the trap in the dielectric layer. The charge of dielectric will cause adhesion failure of switch. In order to avoid adhesion failure, electrostatic repulsive force is proposed to drive the switch instead of the electrostatic attraction force. Theoretically, there will be no bias potential across the dielectric of the RF MEMS switch driven by electrostatic repulsion force, and charge accumulation will be completely eliminated. Force-producing mechanism of electrostatic repulsion is firstly studied by the COMSOL muhiphysics stimulation on a typical structure of electrostatic repulsion. Influence of structure parameters on displacement of movable plate is studied in the structure of electrostatic repulsion. Driving voltage is effectively reduced through structural optimization, which offer a reference for follow-up design of switch.

关 键 词：射频微机电系统 静电斥力 介质充电 

分 类 号：TP391[自动化与计算机技术—计算机应用技术]