基于REC技术的氮化铟DFB激光器仿真分析  

Simulation and Analysis of InN DFB Laser based on REC Technology

作　　者：仲光彬 胡芳仁[1] ZHONG Guang-bin;HU Fang-ren(College of Electronic and Optical Engineering ＆ College of Microelectronics,Nanjing University of Posts and Telecommunications,Nanjing 210046,China)

机构地区：[1]南京邮电大学电子与光学工程学院微电子学院,南京210046

出　　处：《光通信研究》2018年第4期35-38,78,共5页Study on Optical Communications

基　　金：国家自然科学基金资助项目(61574080;61274121);江苏省自然科学基金资助项目(BK2012829);南京邮电大学人才引进项目(NY212007)

摘　　要：提出一种基于重构等效啁啾(REC)技术的1 550nm波段氮化铟分布反馈(DFB)半导体激光器。在传输矩阵法(TMM)的理论基础上,对该结构激光器的各项光学性能进行仿真分析。结果表明,基于该技术设计的激光器具有良好的光电特性,阈值电流很小,约为6.1mA,斜效率为0.31mW/mA;在20mA的注入电流下得到了1 549.09nm的单模激射,边模抑制比均超过了39dB。同时,分析了激光器腔长和有源层厚度对其光电特性的影响,腔长越长,功率越低且烧孔效应越强;随着有源层厚度的增大,阈值电流也随之增高。这一结果可以为氮化铟DFB激光器的设计加工提供一定的参考。A 1 550 nm-band Indium Nitride （InN） Distributed Feedback （DFB） semiconductor laser based on the Reconstruction Equivalent Chirp （REC） technology is proposed. Based on the theory of Transfer Matrix Method （TMM）, the optical properties of the structured laser are simulated and analyzed. The results show that the laser designed on the basis of this technology has good optoelectronic characteristics and has a very small threshold current at about 6.1 mA with slope efficiency of 0.31 mW/mA. The single-mode lasing at 1 549.09 nm is obtained at an injection current of 20 mA, and the side mode suppression ratio exceeds 39 dB. The effects of laser cavity length and active layer thickness are also analyzed. The longer the cavity length indicates lower power and stronger hole burning effect. The larger active layer thickness indicates higher the threshold current. This result provides some reference value for the design and processing of indium nitride DFB laser.

关 键 词：半导体激光器 分布反馈 氮化铟 重构等效啁啾 传输矩阵法 

分 类 号：TN248.4[电子电信—物理电子学]