非晶硅对MoO_x/c-Si异质结太阳电池器件的影响  

INFLUENCE OF AMORPHOUS SILICON TO MoO_x/n-c-Si SOLAR CELL

作　　者：陈涛 刘玮 戴小宛 周志强 何青 孙云 Chen Tao;Liu Wei;Dai Xiaowan;Zhou Zhiqiang;He Qing;Sun Yun(Institute of Photoelectronic Thin Film Devices and Technology and Tianjin Key Laboratory of Thin Film Devices and Technology,Nankai University,Tianjin 300071,China)

机构地区：[1]南开大学电子信息与光学工程学院天津市光电子薄膜器件与技术重点实验室

出　　处：《太阳能学报》2018年第7期1870-1874,共5页Acta Energiae Solaris Sinica

基　　金：广东省扬帆计划引进创新创业团队(2014YT02N037)

摘　　要：室温下电子束蒸发沉积氧化钼（MoOx）薄膜呈非晶态,光学带隙约为3.6 eV,与单晶硅表面构成MoOx/c-Si异质结并具有钝化作用,但明显低于i∶α-Si∶H钝化。ITO/MoOx/i∶α-Si∶H/n∶c-Si/i∶α-Si∶H/n＋∶α-Si∶H/Al太阳电池结构,既有晶硅前后表面钝化,又增加了背电场层,适当的MoOx厚度可获得电池的最高效率（15.5%）;若取消晶硅表面i∶a-Si∶H钝化,与HIT（heterojunction with intrinsic thinlayer）电池类似,硅的前表面复合增大,电池效率降为11.5%;若取消背表面i∶a-Si∶H钝化及背电场材料n＋∶a-Si∶H,电池效率急剧下降到8.3%,这表明背表面钝化及背电场,对MoOx/c-Si异质结太阳电池特性具有更为重要的作用,对高效器件制备具有一定指导意义。The 3.6 eV band gapamorphous MoOx deposited via e-beam evaporation at room temperaturecan passivate thesilicon surface,though the effect is worse than α-Si∶H.We get a power converse efficiency（η）of 15.5% solar cell withthe structure of ITO/MoOx/i∶α-Si∶H/n∶c-Si/i∶α-Si∶H/n＋∶α-Si∶H/Al,which has a proper MoOx thickness and canenhance the front surface passivation and get a back surface field.Without the front α-Si∶H,the recombination becomeserious and the η of cell is 11.5%,which is similar with HIT solar cell;without the back field,the η of cell reduce to8.3%,which suggests that the rear i∶α-Si∶H and n＋∶α-Si∶H is more important to the solar cell.This work is instructive tohigh converge efficiency solar cell.

关 键 词：氧化钼 晶硅异质结 HIT 非晶硅钝化 太阳电池 

分 类 号：O475[理学—半导体物理]