功率集成光激MOS控制交流多路开关模拟设计  

Simulation Design of Power Integrated Light-Activated MOS-Controlled Multiway Switch

作　　者：张华曹[1] 段飞[1] 

机构地区：[1]西安理工大学自动化与信息工程学院,陕西西安710048

出　　处：《西安理工大学学报》2002年第2期151-153,共3页Journal of Xi'an University of Technology

摘　　要：介绍了一种新型功率集成光激 MOS控制多路开关 ,它由双向晶闸管、MOS器件、光电器件组成。此开关通过光电转换来实现强电与弱电之间的隔离 ;可工作在交流状态 ,其通态压降低 ,约在 1 .5～ 3 V之间 ;并对其阻断特性、电流特性、开关特性进行了全面的模拟分析。A new power integrated light activated MOS controlled multiway switch is described,which consists of bi directional thyristors,MOS and photoelectric devices.The multiway switch is adaptable for the development of power supply products of various kinds.The isolation between strong and weak current is accomplished by photoelectric conversion.The switch is capable of working in AC circuits with on state voltage consumption from 1.5 V to 3 V.In addition,an allround simulation is made on the block breakage performance,current performance and switch behavior.

关 键 词：光激 MOS控制 双向晶闸管 多路开关 功率集成电路 

分 类 号：TN4[电子电信—微电子学与固体电子学]