低轴间耦合的MEMS三维电场传感器  

MEMS-based Three-dimensional Electric Field Sensor with Low Cross-axis Coupling Interference

作　　者：凌必赟 彭春荣[1] 任仁[1] 储昭志 张洲威 雷虎成 夏善红[1] LING Biyun;PENG Chunrong;REN Ren;CHU Zhaozhi;ZHANG Zhouwei;LEI Hucheng;XIA Shanhong(State Key Laboratory of Transducer Technology,Institute of Electronics,Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院电子学研究所传感器技术国家重点实验室,北京100190 [2]中国科学院大学,北京100049

出　　处：《电子与信息学报》2018年第8期1934-1940,共7页Journal of Electronics & Information Technology

基　　金：国家自然科学基金(61327810);国家863计划项目(2015AA042602);中国科学院创新面上基金(CXJJ-17-M151)~~

摘　　要：轴间耦合干扰是影响3维电场传感器测量准确性的重要因素。该文提出了一种低耦合干扰的MEMS 1维电场敏感芯片,并将3个上述的芯片正交组合研制出一款低轴间耦合的MEMS 3维电场传感器。不同于已见报道的测量垂直方向电场分量的MEMS 1维电场敏感芯片,该文提出的芯片采用轴对称设计,在差分电路的配合下能够测量垂直于对称轴方向的面内电场分量,并能够消除正交于测量轴方向的电场分量的耦合干扰。该MEMS 3维电场传感器具尺寸小和集成度高等优点。实验结果表明在0~120 k V/m电场强度范围内,该MEMS 3维电场传感器的轴间耦合灵敏度小于3.48%,3维电场测量误差小于7.13%。Cross-axis coupling interference influences greatly the measurement accuracy of Three-Dimensional （3D） Electric Field Sensor （EFS）. A MEMS-based One-Dimensional （1D） Electric Field Microsensor （EFM） chip with low coupling interference is presented, and a MEMS-based 3D EFS with low cross-axis coupling interference is developed by arranging three 1D EFM chips orthogonally. Different from previously reported 1D EFM chips sensitive to perpendicular electric field component, the proposed 1D EFM chip is designed to be symmetrical and connected to difference circuit, so that it is capable of sensing parallel electric field component perpendicular to axis of symmetry and eliminating coupling interference. The proposed 3D EFS has the advantages of small size and high integration. Experimental results reveal that in the range of 0-120 kV/m, the cross-axis sensitivities are within 3.48%, and the total measurement errors of this 3D EFS are within 7.13%.

关 键 词：MEMS 3维 电场传感器 轴间耦合干扰 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]