纳米双栅MOSFET噪声输运特性的分析  

作　　者：丁兵 

机构地区：[1]安康学院电子与信息工程学院,陕西安康725000

出　　处：《科技创新与应用》2018年第20期20-21,25,共3页Technology Innovation and Application

基　　金：陕西省教育厅自然科学专项"基于微波与射频器件噪声的测试与应用研究"(编号:16JK1016)

摘　　要：在双栅纳米MOSFET中,输运参数对器件输运机制描述至关重要。文章主要对纳米双栅MOSFET输运的背散射系数进行研究,分别得到了器件在线性区和饱和区的背散射系数公式,并用Matlab编程体现背散射系数随沟道长度、温度和偏置电压的变化关系,文章得到的结果与已有文献给出的结果一致。In double-gate nanocrystalline MOSFET, transport parameters are essential for the description of the transport mecha-nism of the devices. In this paper, the backscattering coefficients of nanocrystalline double -gate MOSFET transport are studied,and the formulas of backscattering coefficients in linear region and saturation region are obtained,respectively. The variation of backscat-tering coefficient with channel length, temperature and bias voltage is reflected by Matlab programming. The results obtained in this paper are in agreement with those given in previous literatures.

关 键 词：双栅MOSFET 噪声 输运机制 MATLAB 

分 类 号：TN386[电子电信—物理电子学]