不同浓度Y掺杂β-FeSi_2光电特性研究  

作　　者：张春红 张忠政 

机构地区：[1]安顺学院数理学院,贵州安顺561000 [2]安顺学院电子与信息工程学院,贵州安顺561000

出　　处：《科技创新与应用》2018年第20期30-32,共3页Technology Innovation and Application

基　　金：贵州省科学技术厅;安顺市人民政府;安顺学院联合科技基金项目"新型二维半导体材料磷烯掺杂改性的机理研究"(黔科合LH字[2017]7042号)

摘　　要：文章采用赝势平面波方法对不同浓度稀土Y掺杂β-FeSi_2的光电性质进行了计算和分析。研究发现:β-FeSi_2中掺入Y后晶胞体积变大,并且随着Y浓度的增加,体积也会越来越大;费米面附近的能带结构变得复杂;静态介电常数明显增大,介电函数虚部峰值增大且向低能方向移动。研究结果为β-FeSi_2掺杂改性提供依据。The pseudo -potential plane wave method was used to calculate and analyze the photoelectric properties of 茁- FeSi2 doped by rare earth Y with different concentrations. It was found that the volume of p-FeSi2 become larger after Y-doped, and the volume becomes larger with the increase of Y concentration. The energy band structure near the Fermi surface becomes complicated. The static dielectric constant increases significantly. The peak of the imaginary part of the dielectric function increases and moves in the direction of low energy. The results provide basis for the doping modification of p-FeSi2 .

关 键 词：Β-FESI2 掺杂 能带结构 介电函数 

分 类 号：P618.7[天文地球—矿床学]