InGaN基可见光光电二极管研究进展  

InGaN Visible Light Photodiode

作　　者：黎斌 卫静婷 谭露雯 LI Bin;WEI Jin-ting;TAN Lu-wen(The Open University of Guangdong,Guangzhou,Guangdong,China,510091)

机构地区：[1]广东开放大学,广东理工职业学院,广东广州510091

出　　处：《广东开放大学学报》2018年第3期108-112,共5页JOURNAL OF GUANGDONG OPEN UNIVERSITY

摘　　要：与商用硅基或磷化镓光电二极管相比,In Ga N基可见光光电二极管在窄带通可见光应用领域表现出明显优势。到目前为止,In Ga N/Ga N MQWs为有源层结构和In Ga N体基结构光电二极管都表现出暗电流较大,外量子效率较低,探测带边接近紫外范围等缺点。虽然通过器件工艺和结构设计,可以提升器件的性能,但是In Ga N材料外延技术方面的突破才是器件提升性能的根本。Compared with commercial Si based photodiodes or Ga P photodiodes, InGaN based visible photodiodes have obvious advantages in the field of narrow-band visible light applications. Up to now, the photodiodes with structure of InGaN/Ga N MQWs as active layer and InGaN based bulk photodiodes have some serious shortcomings, such as large dark current, low external quantum efficiency, the detection edge near the ultraviolet range, and so on. Although the development of device technology and structure design can improve the performance of photodiodes, the breakthrough of InGaN material epitaxy technology is the key in improving the performance of devices.

关 键 词：INGAN 可见光光电二极管 InGaN/GaN多重量子阱 金属-半导体-金属 金属-半导体 P-I-N 

分 类 号：TN312.8[电子电信—物理电子学]