SiHCl_3还原工艺的关键参数探究  

The Study on Key Factors of SiHCl_3 Deoxidization Process

作　　者：贾曦[1] 梅艳[1] 胡小冬[1] Jia Xi;Mei Yan;Hu Xiaodong(Leshan Vocational and Technical College,Leshan 614000,China)

机构地区：[1]乐山职业技术学院,四川乐山614000

出　　处：《山东化工》2018年第11期96-97,99,共3页Shandong Chemical Industry

基　　金：四川省教育厅自然科学基金研究项目(17ZB0200)

摘　　要：多晶硅制备方法主要有气液沉积法、流化床法、硅烷热解法、冶金法、物理提纯法、改良西门子法等。改良西门子法由于安全性好、沉积速率高、纯度较高等优点,成为目前应用最广泛的工艺方法。SiHCl_3还原是其中一项关键技术,也是主要耗能部分。在国家提倡建设节能降耗、绿色环保型企业的背景下,如何提高SiHCl_3一次转化率和Si的沉积速率,从而提高产量和质量,降低能耗,具有重要意义。本文针对该问题探究相关参数和优化方法,结合生产实践,探究合理解决方案。The main preparation methods of polysilicon include such ones： the gas and fluid co-deposition method,the fluidized bed method,the silane pyrolysis,the metallurgy method,the physical purification method,the modified Siemens Method,etc. The modified Siemens Method is the most widely used method,as its many advantages,such as higher security,higher deposition rate,and higher purity,etc. The SiHCl3 Deoxidization Process is a key technology,as well as the main energy dissipation department. At present,our enterprise advocates the energy-saving and cost-reducing production,and environmental protection. On the background,that how to raise the conversion rate of one-time SiHCl3 deoxidization and the rate of Si deposition,it is a significant topic. In this paper,these two questions are to be investigated combined with production practice to research appropriate solutions.

关 键 词：多晶硅 节能降耗 改良西门子法 还原 氢化 

分 类 号：TQ127.2[化学工程—无机化工]