金属连线间形成空气隙的改进工艺研究  

Change Airgap Process to Improve the Metal Bridge in RF Switch Devices

作　　者：孙玉红 SUN Yuhong(Shanghai Huahong Grace Semiconductor Manufacturing Corporation,Shanghai 201203,China.)

机构地区：[1]上海华虹宏力半导体制造有限公司,上海201203

出　　处：《集成电路应用》2018年第7期53-55,共3页Application of IC

基　　金：上海市经济和信息化委员会软件和集成电路产业发展专项基金(2015.150223)

摘　　要：在射频开管器件中,导通电阻和关断电容是衡量射频开管器件优良与否的关键参数。而后段金属连线之间的电容对整体的电容有直接影响。为了减小后段金属连线间的电容,铝互联工艺中一般采用在金属连线间形成空气隙的方法。但随着工艺节点的变小,金属连线最小间距相应随之减小,在金属连线侧壁处很难沉积上保护介质,金属容易从侧壁二氧化硅中移动到空气隙中,引发金属互联短路。以射频开关为例,研究了二氧化硅不同的填充方法,通过分析和实验,对填充材料和填充厚度进行了优化,改善了金属连线最小间距处的侧壁保护,同时使射频器件源漏叉指结构区域大间距金属连线处仍然能保持比较小的寄生电容。Ron and Coff is a measure of RF switch device quality. Whereas, the backend interconnect parasitical capacitance has effect on total capacitance of a device. To form SiO2 airgap is a mainly method to decrease the backend interconnect capacitance in IC industry. But with the process node enhanced, it＇s very difficult to deposit SiO2 on the interconnect sidewall due to more small interconnect space. Al will move to airgap through weak sidewall, leading to interconnect bridge. In this paper, we take 0.13μm RF switch as example, studied the diffident deposition material on the sidewall profile. We changed the deposition material and optimized the deposition thickness to get the good profile both at the minimum and the slightly lager interconnect space. Meanwhile, theparasitical capacitance did not change much.

关 键 词：集成电路制造 金属互联 空气隙 寄生电容 射频开关 

分 类 号：TN405[电子电信—微电子学与固体电子学]