基于GaAs膜的GaInP/AlGaInP无杂质空位扩散诱导量子阱混杂的研究（英文）  

Impurity-free Vacancy Diffusion Induces Intermixing in GaInP/AlGaInP Quantum Wells Using GaAs Encapsulation

作　　者：田伟男 熊聪 王鑫[1] 刘素平[1] 马骁宇[1] TIAN Wei-nan;XIONG Cong;WANG Xin;LIU Su-ping;MA Xiao-yu(National Engineering Research Center for Optoelectronic Device,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;College of Materials Sciences and Opto-Electronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]中国科学院半导体研究所光电子器件国家工程研究中心,北京100083 [2]中国科学院大学材料科学与光电技术学院,北京100049

出　　处：《发光学报》2018年第8期1095-1099,共5页Chinese Journal of Luminescence

基　　金：Supported by National Key Research and Development Program of China(2017YFB0405303)~~

摘　　要：在红光半导体激光器芯片上采用GaAs介质膜进行无杂质空位扩散诱导量子阱混杂研究。激光器芯片的有源区由一个9 nm厚的GaInP量子阱和两个350 nm厚的AlGaInP量子垒构成,利用MOCVD方法在芯片表面生长GaAs介质膜。在950℃的情况下进行不同时长不同GaAs层厚度的高温快速热退火诱发量子阱混杂。通过光致发光光谱分析样品混杂之后的波长蓝移情况和光谱半峰全宽变化规律。当退火时间达到120 s时,样品获得53.4 nm的最大波长蓝移;在1 min退火时间下获得18 nm的最小光谱半峰全宽。Impurity-free vacancy diffusion（ IFVD） induced quantum well intermixing（ QWI） of red light diode laser wafer using GaAs encapsulation is explored. The wafer has an active region of a 9 nm-thick GaInP quantum well and two 350 nm-thick AlG aInP barriers. The GaAs dielectric layer is prepared through MOCVD. The QWI is induced by rapid thermal annealing at 950 ℃ at different times and different thicknesses of GaAs. Blue shifts and full width at half maximum（ FWHM） are obtained through photoluminescence tests. A maximum blue shift of 53. 4 nm is obtained at 120 s and an optimal FWHM of 18 nm by the IFVD-induced QWI is noted at 1 min.

关 键 词：蓝移 无杂质空位扩散 量子阱混杂 扩散 

分 类 号：TN248[电子电信—物理电子学]