短沟道MOSFET的毫米波噪声建模  

Millimeter-wave noise modeling of nanoscale MOSFETs

作　　者：彭小梅 赵爱峰[1] 王军[1] Peng Xiaomei;Zhao Aifeng;Wang Jun(School of Information Engineering,Southwest University of Science and Technology,Mianyang 621010,China)

机构地区：[1]西南科技大学信息工程学院,四川绵阳621010

出　　处：《电子技术应用》2018年第8期31-34,38,共5页Application of Electronic Technique

基　　金：创新基金资助项目(18ycx116)

摘　　要：基于40 nm MOSFET的器件物理结构,建立了统一的MOSFET毫米波噪声模型,以此来表征漏极电流噪声、感应栅极电流噪声以及两者之间的互相关噪声的特性。通过将栅极过载效应引入高频噪声模型,使得统一模型具有良好的平滑性、准确性和连续性。最后,将所建模型的仿真结果与传统的高频噪声模型进行对比,并且对比所建模型与传统模型的四噪声参数以及实测的数据来验证模型的有效性和精准性。Based on the physical structure of 40 nm MOSFETs, this paper establishes a unified MOSFET millimeter-wave noise model to characterize the characteristics of drain-current noise, inducted gate-current noise and cross-correlation noise between them. By introducing the gate overdrive effect into the high frequency noise model so that the uniform models had good smoothness,accuracy and continuity. Finally, the simulation results of the model are compared with the traditional high-frequency noise model,the validity and accuracy of the model are verified by comparing the four-noise parameters of the model with the traditional model and the measured data.

关 键 词：MOSFET 相关噪声 毫米波 四噪声参数 

分 类 号：TN32[电子电信—物理电子学]