应用于802.11ac的SiGe BiCMOS低噪声放大器  

Design of linear low-noise amplifier for 802.11ac based on SiGe BiCMOS technology

作　　者：魏启迪 林俊明[1] 章国豪 陈亮 Wei Qidi;Lin Junming;Zhang Guohao;Chen Liang(School of Information,Guangdong University of Technology,Guangzhou 510000,China;The 55th Research Institute of China Electronics Technology Group Corporation,Nanjing 210000,China;Nanjing Guobo Electronics Company Limited,Nanjing 210000,China)

机构地区：[1]广东工业大学信息工程学院,广东广州510000 [2]中国电子科技集团公司第五十五研究所,江苏南京210000 [3]南京国博电子有限公司,江苏南京210000

出　　处：《电子技术应用》2018年第7期42-45,51,共5页Application of Electronic Technique

基　　金：国家自然科学基金(61574049)

摘　　要：基于IBM 0.36μm SiGe BiCMOS工艺设计应用于802.11ac的全集低噪声放大器,工作频段为5~6 GHz,且带有旁路功能。低噪声放大器的主体电路采用单端发射极电感负反馈结构。模拟结果显示,在工作电压为5 V的情况下,当低噪声放大器工作时,HBT低噪声放大器工作稳定,常温下,整体的噪声系数为2.2 dB@5.5 GHz,小信号增益为13.3 dB,旁路噪声系数为7.2 dB@5.5 GHz,插入损耗为6.8 dB。当输入总功率为0 dBm的双音信号(-3 dBm/tone)时,输入三阶交调点约为10.2 dBm。This paper presents a 802. 11 ac low-noise amplifier with bypass function integrated in 0. 36 μm SiGe BiCMOS process.In order to meet the specifications of the criteria, the methods for optimizing noise, power gain and stability were given. In the cir-cuit design, the Si Ge HBTs were designed with inductive emitter degeneration structure. According to the simulation results, the HBT low-noise amplifier is unconditionally stable when the power supply voltage is 5 V and the noise figure（NF） is about 2. 2 dB with small signal gain 13. 3 dB, and 7. 2 dB with insertion loss about 7. 2 dB for LNA enabled and LNA bypass status, respectively.The input third order intercept point is about 10. 2 dBm with two-tone signal at 2. 412 and 2. 437 GHz, respectively. Total input power is 0 d Bm（-3 d Bm/tone）.

关 键 词：低噪声放大器 802.11ac 锗化硅 双极-互补金属氧化物半导体 

分 类 号：TN433[电子电信—微电子学与固体电子学]