圆片级封装用玻璃通孔晶片的减薄工艺  

Thinning Process of the TGV Wafer Used in the Wafer-Level Packaging

作　　者：杨静[1] 韩焕鹏[1] 杨洪星[1] 王雄龙 张伟才[1] Yang Jing;Han Huanpeng;Yang Hongxing;Wang Xionglong;Zhang Weicai(The 46^th Research Institute,CETC,Tianjin 300220,Chin)

机构地区：[1]中国电子科技集团公司第四十六研究所

出　　处：《微纳电子技术》2018年第9期694-699,共6页Micronanoelectronic Technology

摘　　要：对圆片级封装用玻璃通孔（TGV）晶片的减薄加工工艺进行了研究并最终确定出工艺路线。该减薄加工工艺主要包括机械研磨及化学机械抛光（CMP）过程。通过机械研磨,玻璃通孔晶片的残余玻璃层及硅层得到有效去除,整个晶片的平整度显著提高,用平面度测量仪测试该晶片研磨后的翘曲度与总厚度变化（TTV）值分别为7.149μm与3.706μm。CMP过程使得TGV晶片的表面粗糙度大幅度降低,经白光干涉仪测试抛光后TGV晶片的表面粗糙度为4.275 nm。通过该减薄工艺加工的TGV晶片能够较好满足圆片级封装时的气密性要求。The thinning process of the through glass via（TGV）wafer used in the wafer-level packaging was explored and finally determined.The thinning process mainly consists of mechanical lapping and chemical mechanical polishing（CMP）.The residual glass layer and silicon layer on the TGV wafer were removed effectively,and the flatness of the whole wafer was improved significantly after the mechanical lapping process.The warp and total thickness variation（TTV）of the wafer after mechanical lapping measured by the flatness measuring instrument were 7.149μm and 3.706μm,respectively.The surface roughness of the TGV wafer was decreased greatly through the CMP process.The surface roughness of the polished TGV wafer was 4.275 nm measured by the white light interferometer.The TGV wafer after the thinning process can meet the requirement of air tightness in the wafer-level packaging.

关 键 词：玻璃通孔(TGV)晶片 机械研磨 化学机械抛光(CMP) 平整度 粗糙度 

分 类 号：TN305.2[电子电信—物理电子学]