Si基双色碲镉汞材料阻挡层生长及表征  

Growth and characterization of barrier layer in dual band HgCdTe on Si composite substrate

作　　者：高达[1] 王经纬[1] 王丛[1] 许秀娟[1] GAO Da;WANG Jing-wei;WANG Cong;XU Xiu-juan(North China Research Institute of Electro-Optics,Beijing 100015,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2018年第8期1005-1008,共4页Laser & Infrared

摘　　要：报道了Si基中短波双色碲镉汞(MCT)的最新研究进展。阻挡层的生长与表征是获得材料参数精确控制、晶体质量良好的Si基中短波双色HgCdTe材料关键所在。经过阻挡层生长工艺优化,解决了双色HgCdTe材料缺陷直径较大的问题。缺陷直径控制在10μm以内,缺陷密度控制在2000 cm-3以内。并使用光致发光技术(PL),得到了不易直接获得的双色HgCdTe材料阻挡层的组分信息。The recent progress on molecular beam epitaxy growth of SW/MW dual band HgCdTe on Si composite substrate are reported.The growth and characterization of the barrier layer are the key points of getting the SW/MW dual-band HgCdTe material on Si substrate with good crystal quality and parameter accuracy.After the optimization growth of the barrier layer,the diameter of the defect is less than 10μm and defect density is less than 2000 cm^（-3）.The composition of barrier layer in dual band HgCdTe is obtained by the photoluminescence（PL） spectrum.

关 键 词：HGCDTE 中短波双色 阻挡层 

分 类 号：TN213[电子电信—物理电子学]