耦合电容器元件击穿的分析与判别  

Analysis and Discrimination on Element Breakdown in Coupling Capacitor

作　　者：宋守龙 SONG Shoulong(Guilin Power Capacitor Co.,Ltd.,Guilin 541004,China)

机构地区：[1]桂林电力电容器有限责任公司,广西桂林541004

出　　处：《电力电容器与无功补偿》2018年第3期92-95,共4页Power Capacitor & Reactive Power Compensation

摘　　要：在耦合电容器的生产和运行过程中,经常会面临对元件击穿进行分析判别。通过建立元件击穿模型,阐述了元件击穿时耦合电容器的电容变化率、tanδ增量与元件总数n及击穿点电阻的关系;得出了当有k元件击穿时,电容变化率最大约为k/n,tanδ增量最大不会超过k/(2n)的结论。这些结论有助于分析元件击穿时的参数变化,或根据参数变化对元件是否击穿及击穿严重程度进行判别。The analysis and discrimination of the element is often performed during production and operation of the coupling capacitor.In this paper,the relationship among capacitance variation rate,increment of tanδ,number of elements n and resistance of the breakdown point of the coupling capacitor in the element breakdown is described by way of setting up the element breakdown model.The conclusions that the maximum variation of capacitance is about k/n,the maximum increment of tanδis no more than k/2n in case of breakdown of element k is obtained.These conclusions are helpful to analyze the parameters variation in the element breakdown,or make discrimination of the breakdown and its severity in accordance with the parameters variation.

关 键 词：耦合电容器 元件击穿 电容变化率 tanδ增量 

分 类 号：TM53[电气工程—电器]