基于偏振拉曼散射光谱的4H-SiC晶体各向异性特性研究  

Study on Anisotropic Properties of 4H-SiC by Polarized Raman Scattering Spectroscopy

作　　者：赵帝舒 王芳泽 万玲玉[1] 杨庆怡[1] 冯哲川 ZHAO Dishu,WANG Fangze,WAN Lingyu,YANG Qingyi,FENG Zhechuan(College of Physics Science ＆ Technology,Guangxi University,Nanning 530004,Chin)

机构地区：[1]广西大学物理科学与工程技术学院,南宁530004

出　　处：《光散射学报》2018年第2期133-138,共6页The Journal of Light Scattering

基　　金：国家自然科学基金(10367004);广西科技厅重大专项;广西杰出人才专项基金资助

摘　　要：采用背向散射偏振配置,对半极性a面(1120)生长的4H-SiC晶体,测量了激发光偏振方向与光轴成不同角度时各声子振动的偏振拉曼散射光谱,研究了不同声子模式的偏振拉曼散射光的强度变化与性质。利用拉曼选择定则,对实验结果进行拟合分析得到了不同声子模式的拉曼散射矩阵张量元系数及其各向异性特征。研究结果为深入了解4H-SiC晶体的微观结构和各向异性性质提供依据。Using the backscattering polarization configuration,the angle variations of the Raman scattered intensities of allowed phonon modes were measured for the 4 H-SiC thin film grown on the semipolar a-plane（1120）and the intensity properties were investigated.According to the Raman selection rules,the Raman tensor elements of allowed phonon modes have been extracted by data fitting and the anisotropic characteristics of 4 H-SiC were explored.The results provide a further understanding of the microstructure and anisotropy of4 H-SiC crystal.

关 键 词：碳化硅 偏振拉曼散射 张量元 各向异性 

分 类 号：O43[机械工程—光学工程]