用于X射线闪烁屏的硅微通道阵列整形技术  

Silicon Microchannel Array Shaping Technology for the X-Ray Scintillation Screen

作　　者：余金豪 杨炳辰 杨超 陈奇 凌海容 王蓟[1] 王国政[1] 杨继凯[1] 端木庆铎[1] Yu Jinhao;Yang Bingchen;Yang Chao;Chen Qi;Ling Hairong;Wang Ji;Wang Guozheng;Yang Jikai;Duanmu Qingduo(School of Science,Changchun University of Science and Technology,Changchun 130022,China)

机构地区：[1]长春理工大学理学院

出　　处：《半导体技术》2018年第8期603-609,共7页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61107027,51502023);吉林省科技厅重点科技研发项目(20180201033GX);吉林省教育厅资助项目(20160358)

摘　　要：为制备用于X射线闪烁屏的高开口面积比硅微通道阵列,研究了四甲基氢氧化铵（TMAH）溶液温度和质量分数对硅（100）晶面和（110）晶面腐蚀速率的影响。通过金相显微镜观测硅微通道端面尺寸并计算腐蚀速率,分析了硅（100）晶面和（110）晶面腐蚀速率比对硅微通道阵列孔形的影响,探讨了TMAH溶液温度和质量分数与硅微通道阵列开口面积比的关系。研究表明,硅（100）晶面和（110）晶面的腐蚀速率比是影响硅微通道阵列开口面积比的主要因素。当硅（100）晶面与（110）晶面腐蚀速率比大于2时,得到具有高开口面积比的正方形硅微通道阵列。使用质量分数为1%的TMAH溶液在40℃的溶液温度下,制备出开口面积比大于81%的正方形硅微通道阵列。通过高温填充CsI（Tl）制备出基于硅微通道的X射线闪烁屏,X射线成像结果表明通道整形技术有助于提高闪烁屏的性能。In order to fabricate a high open area ratio silicon microchannel array used in the X-ray scintillation screen,the effects of the temperature and mass fraction of tetramethylammonium hydroxide（ TMAH） solution on the etching rates of the（ 100） and（ 110） crystal planes of the silicon were studied.The sectional dimension of the silicon microchannel array was measured by a metallographic microscope and the etching rate of the silicon was calculated. The effects of the etching rate ratio of the（ 100） and（ 110） crystal planes of silicon on the pore shape of the silicon microchannel array were analyzed. The relationships of the temperature and mass fraction of TMAH solution with the open area ratio of the silicon microchannel array were discussed. The results show that the etching rate ratios of the（ 100） and（ 110）crystal planes of silicon are the fundamental factors of the open area ratio of the silicon microchannel array. A square-pore with high open area ratio was obtained,when the etching rate ratio of the the（ 100）and（ 110）crystal planes of silicon was greater than 2. The square-pore silicon microchannel array with an open area ratio of greater than 81% was prepared using the TMAH solution with a mass fraction of 1%at a solution temperature of 40 ℃. X-ray scintillation screens based on silicon microchannels were prepared by filling CsI（ Tl） at a high temperature. The X-ray imaging results show that the silicon microchannel shaping technology helps to improve the performance of scintillation screens.

关 键 词：X射线闪烁屏 硅微通道阵列 各向异性腐蚀 整形技术 开口面积比 

分 类 号：TN304.12[电子电信—物理电子学]