沉积功率和退火工艺对PE-ALD氧化铝薄膜的影响  

Influences of Deposition Power and Annealing Process on Al2O3 Film Deposited by PE-ALD

作　　者：刘媛媛 杜纯 曹坤 陈蓉 徐湘伦 黄静[4] 单斌 Liu Yuanyuan;Du Chun;Cao Kun;Chen Rong;Xu Xianglun;Huang Jing;Shan Bin(a.State Key Laboratory of Materials Processing and Die ＆ Mould Technology,School of Materials Science and Engineering;b.State Key Laboratory of Digital Manufacturing Equipment and Technology,School of Mechanical Science and Engineerin;c.School of Optical and Electronic Information,Huazhong University of Science and Technology,Wuhan 430074,China;2.Wuhan China Star Optoelectronics Technology Co.,Ltd.,Wuhan 430078,China)

机构地区：[1]华中科技大学材料科学与工程学院材料成形与模具技术国家重点实验室,武汉430074 [2]华中科技大学机械科学与工程学院数字制造装备与技术国家重点实验室,武汉430074 [3]华中科技大学光学与电子信息学院,武汉430074 [4]武汉市华星光电技术有限公司,武汉430078

出　　处：《半导体技术》2018年第8期610-615,共6页Semiconductor Technology

基　　金：国家自然科学基金资助项目(517020510,51575217,51572097);中国博士后科学基金资助项目(2017M12451);ALD技术封装薄膜开发项目

摘　　要：Al2O3薄膜常用于有机电子器件的稳定化封装。除了薄膜的水气渗透率特性,薄膜的表面粗糙度、润湿性和折射率等性能也会影响薄膜的最终封装效果。采用自制等离子增强原子层沉积（PE-ALD）系统在低温下成功制备了Al2O3薄膜,研究了沉积功率和退火参数对Al2O3薄膜微观形貌和性能的影响。结果表明,Al2O3薄膜的生长速率和折射率随沉积功率的增加分别呈现先增加后下降和不断增加的趋势,当沉积功率为1 800 W时,薄膜的线性生长速率达到0.27 nm/cycle,远高于传统热原子层沉积技术的沉积速率。退火处理不会改变Al2O3薄膜晶态,但改善了薄膜的表面粗糙度,降低了接触角和有机基团红外强度。得到了最佳的PE-ALD薄膜制备工艺条件,实现了对有机发光二极管器件的有效封装。Al2O3 films are widely used in the stable packaging of organic electronic devices. Besides the characteristic of water vapor transmission rate,the surface roughness,wettability and refractive index of the film also affect the final encapsulation result of the films. The Al2O3 films were successfully prepared by self-made plasma enhanced atomic layer deposition（ PE-ALD） system at low temperature. The effects of deposition power and annealing parameters on the microtopography and properties of the Al2O3 films were studied. The results show that the growth rate of Al2O3 films increases first and then decreases,while the refractive index keeps increasing with the increasing deposition power. When the deposition power was 1 800 W,the linear growth rate reached 0. 27 nm/cycle,which was much higher than that of the film prepared by thermal atomic layer deposition system. Besides,after the annealing process thecrystalline state of the Al2O3 films couldn＇t be changed,but the surface roughness was improved. And the contact angle and the infrared intensity of the organic group decreased after annealing process. The optimum preparation conditions of PE-ALD thin films were obtained,and the effective packaging of organic light emitting diodes was realized.

关 键 词：等离子增强原子层沉积(PE-ALD) AL2O3薄膜 沉积功率 退火工艺 有机发光二极管(OLED) 

分 类 号：TN304.055[电子电信—物理电子学] TB383.2[一般工业技术—材料科学与工程]