缺陷表面氮化镓二次外延的分子动力学研究  

Molecular dynamics simulations on regrowth of GaN films with defective epitaxial growth surface

作　　者：文于华[1,2] 贺致远 田芃[1,2] 金佳鸿[1,2] 张梅 汤莉莉 WEN Yuhua;HE Zhiyuan;TIAN Peng;JIN Jiahong;ZHANG Mei;TANG Lili(Institute for Advanced Optics,Hunan Institute of Science and Technology,Yueyang 414006,China;School of Physics and Electronics,Hunan Institute of Science and Technology,Yueyang 414006,China;China Electronic Produce Reliability and Environmental Testing Research Institute,Guangzhou 510610,China;Zhixing College of Hubei University,Wuhan 430011,China)

机构地区：[1]湖南理工学院先进光学研究所,湖南岳阳414006 [2]湖南理工学院物理与电子学院,湖南岳阳414006 [3]工业和信息化部电子第五研究所,广东广州510610 [4]湖北大学知行学院,湖北武汉430011

出　　处：《湖北大学学报（自然科学版）》2018年第5期534-538,共5页Journal of Hubei University：Natural Science

基　　金：国家自然科学基金(51407066);湖南省自然科学基金(13JJ6066);湖南省教育厅科学研究基金(14A062.16C0716)资助

摘　　要：采用分子动力学方法研究含有表面缺陷的氮化镓材料的二次外延生长过程,探讨生长温度,表面缺陷数量和缺陷结构等对二次生长材料质量的影响.发现当在生长表面随机引入3.125%占比的空位缺陷且生长温度在1 373 K以上时,对材料质量的影响不明显;当随机引入12.5%占比的空位缺陷时,可以改善二次生长材料的质量;当在生长表面上引入12.5%占比的2个六边形结构空位缺陷时,缺陷区域出现大量原子的岛状生长,同时原子排列变得无序,二次生长的材料生长质量明显劣化.Regrowth process of GaN thin films with defective epitaxial growth surface were studied bymolecular dynamics method, and the effects of growth temperature, surface defect quantity and defect structureon the quality of regrown crystal were investigated. When there are randomly distributed vacancy defects of3. 125% proportion in the growth surface with a growth temperature above 1 373 K, their influence on crystalquality is not obvious. When there are randomly distributed vacancy defects of 12. 5% proportion in the growthsurface, the crystal quality of the regrowth material can be visibly improved. When 2 hexagonal structures withvacancy defects of 12. 5% proportion are introduced into the growth surface, there will be lots of island growthon them. Meanwhile, crystal structure in the defective area becomes disorderly and crystal quality is obviouslydeteriorated.

关 键 词：氮化镓 分子动力学 二次外延 缺陷 

分 类 号：TN304.02[电子电信—物理电子学]