IrO_2/ZnO接触电学特性改进研究  

作　　者：申芳芳[1] 

机构地区：[1]吉林建筑大学基础科学部,吉林长春130118

出　　处：《科技创新与应用》2018年第27期49-50,共2页Technology Innovation and Application

基　　金：吉林省教育厅"十二五"科学技术研究规划项目(2015第282号)

摘　　要：氧化锌(ZnO)和二氧化铱(IrO_2)都是一种具有独特性的半导体材料,这种半导体材料的结构呈现出六方形,所以ZnO以及IrO_2又被称作是II-VI半导体材料。ZnO以及IrO_2的接触电学特性就是基于它们本身的特点而发展出来的。ZnO对于室温环境的要求是保持在3.37e V,它的束缚能力能够达到60me V,ZnO以及IrO_2具有非常好的的物理性能和化学性质。在目前来说,ZnO被广泛地应用在传感器以及变阻器当中,也会作为相关零件元件出现。通过对IrO_2/ZnO接触电学特性的改进进行分析研究,能够最大程度的提高和完善ZnO以及IrO_2的利用价值,充分发挥出其在金属半导体接触过程的重要作用。Zinc oxide （ZnO） and iridium dioxide （IrO2） are unique semiconductor materials. The structure of this semiconductormaterial is hexagonal, so ZnO and IrO2 are also known as II-VI semiconductor materials. The electrical contact characteristics of ZnOand IrO2 are based on their own characteristics. The requirement of ZnO at room temperature is 3.37 eV. Its binding capacity canreach 60 meV, ZnO and IrO2 have very good physical and chemical properties. At present, ZnO is widely used in sensors and varis-tors, and will also appear as related components. Through the analysis and research on the improvement of the contact electricalcharacteristics of IrO2∕ZnO, the utility value of ZnO and IrO2 can be improved and perfected to the greatest extent, and its importantrole in the contact process of metal semiconductors can be brought into full play.

关 键 词：金属半导体接触 脉冲激光沉积 伏-安特性 二氧化铱 

分 类 号：O472.4[理学—半导体物理]