应变Si NMOSFET总剂量效应  

Total Dose Radiation Effect in Uniaxial Strained Si NMOSFET

作　　者：廖晨光 郝敏如 LIAO Chenguang;HAO Minru(School of Microelectronics,Xidian University,Xi an 710071,China)

机构地区：[1]西安电子科技大学微电子学院,陕西西安710071

出　　处：《电子科技》2018年第9期1-3,17,共4页Electronic Science and Technology

基　　金：陕西省科技计划项目(2016GY-085)

摘　　要：文中主要通过模拟仿真了γ射线辐照对单轴应变Si纳米NMOSFET器件电学特性的影响。仿真分析了不同辐照剂量、结构参数以及物理参数等对阈值电压、隧穿栅电流以及热载流子栅电流的影响。结果表明:在总剂量辐照下,阈值电压随着源/漏结深的增加以及沟道长度的减小而减小,隧穿栅电流随着栅氧化层厚度的增大及栅介电常数的减小而增大,热载流子栅电流随着沟道中掺杂浓度的减小以及栅电压的增大而增大。同时,模拟仿真了器件沟道中应力和载流子的分布。The electrical characteristics of uniaxial strained Si n-channel metal-oxide-semiconductor feld-effect transistor （NMOSFET） have been analyzed under γ-ray radiation by two-dimensional numerical simulator in this paper. The effects of radiation dose, structure parameters and physical parameters on threshold voltage, tunneling gate current and hot carrier gate current are simulated and analyzed. The results show that threshold voltage decreases with increasing junction depth of the source/drain region, and decreasing channel length. The gate tunneling current increases with the increasing gate oxide thickness and the decreasing dielectric constant, and The hot carrier gate current increases with the decrease of the doping concentration in the channel and the increase of the gate voltage. In addition, the distributions of stresses and carriers in the channel of the device are simulated.

关 键 词：总剂量 阈值电压 隧穿 热载流子 栅电流 

分 类 号：TN302[电子电信—物理电子学] TN6