一种高线性度宽带射频放大器  

A Wideband RF Amplifier with High Linearity

作　　者：王国强[1] 王小峰 蒲颜 刘成鹏 潘少俊 WANG Guoqiang;WANG Xiaofeng;PU Yan;LIU Chengpeng;PAN Shaojun(Sichuan Institute of Solid-State Circuits,China Electronics Technology Group Corp.,Chongqing 400060,P.R.China;Beijing Institute of Remote Sensing Equipment,Beijing 100854,P.R.China)

机构地区：[1]中国电子科技集团公司第二十四研究所,重庆400060 [2]北京遥感设备研究所,北京100854

出　　处：《微电子学》2018年第4期463-466,470,共5页Microelectronics

摘　　要：采用InGaP HBT工艺,结合达林顿放大器技术,制作了一种高线性度宽带射频放大器。与传统结构相比,该射频放大器具有高线性度、宽带宽的优点。在10 MHz^1GHz的频率范围内,该放大器的输出1dB压缩点达到21.8dBm,输出3阶交调截止点达到40.6dBm,两者差值为18.8dBm。而传统射频放大器的输出3阶交调截止点仅比输出1dB压缩点高出10dBm。这表明,该放大器非常适合应用于大动态信号处理系统。A high linearity wideband Darlington amplifier was designed in an InGaP HBT process.Compared with the traditional structures,the proposed RF amplifier had a higher linearity and a wider bandwidth.In the frequency range of 10 MHz^1 GHz,the output 1 dB compression point（P1 dB）could reach 21.8 dBm.The output third-order intercept（OIP3）point was 40.6 dBm,about 18.8 dBm higher than the P1 dB,while the OIP3 was only about 10 dBm higher than the P1 dB in common RF amplifiers.The amplifier was very suitable for the large dynamic signal processing system.

关 键 词：达林顿晶体管 射频 高线性度 宽带 GAAS HBT 

分 类 号：TN722[电子电信—电路与系统]