全部耗尽SOI SiGe HBT集电结渡越时间模型研究  

Study on the Base-Collector Junction Transit Time Model of Fully-Depleted SOI SiGe HBTs

作　　者：徐小波[1] 李瑞雪 XU Xiaobo;LI Ruixue(School of Electronic and Control Engineering,Chang＇an University,Xi＇an 710064,P.R.China;Road Traffic Detection and Equipment Engineering Research Center,Xi＇an 710064,19.R.China)

机构地区：[1]长安大学电子与控制工程学院,西安710064 [2]道路交通检测与装备工程技术研究中心,西安710064

出　　处：《微电子学》2018年第4期496-499,514,共5页Microelectronics

基　　金：国家自然科学基金资助项目(61504011);中国博士后基金资助项目(2013M540732);中央高校基本科研业务费资助项目(300102328111)

摘　　要：研究了与CMOS兼容的SOI SiGe HBT结构。首先,分析了SOI SiGe HBT与传统SiGe HBT在结构上的不同之处。然后,针对新结构的全部耗尽工作模式,建立了考虑电流效应的集电结渡越时间模型。最后,讨论了渡越时间与集电区掺杂浓度、集电结电压、传输电流的关系,并与传统器件的渡越时间进行了比较。该渡越时间模型的建立为SOI SiGe HBT特征频率的设计与优化提供了理论基础。The CMOS-compatible SOI SiGe heterojunction bipolar transistor（HBT）structures were studied.Firstly,the differences between the SOI SiGe HBT and the conventional SiGe HBT were analyzed.Secondly,based on the fully-depleted mode of this new structure,the base-collector junction transit time model was established by considering the current effect.Finally,the dependence of the transit time on the collector doping concentration,the base-collector bias,and the transfer current was discussed.The transit time was compared with that of the conventional structures.The proposed model provided the theory foundation for designing and optimizing the cutoff frequency of SOI SiGe HBTs.

关 键 词：SIGE 绝缘体上硅 BICMOS 

分 类 号：TN386[电子电信—物理电子学]