N阱掺杂对PMOS管的SET效应影响研究  

Study of the Influence of N-Well Doping on SET Effect of PMOS

作　　者：赵强[1,2] 徐骅 刘畅咏 韩波 彭春雨[1] 王静[2] 吴秀龙[1] ZHAO Qiang;XU Hua;LIU Changyong;HAN Bo;PENG Chunyu;WANG Jing;WU Xiulong(School of Electronics and Information Engineering,Anhui University,Hefei 280601,P.R.China;School of Computer and Information Engineering,Fuyang Normal University,Fuyang,Anhui 236037,P.R.China;Sichuan Institute of Solid-State Circuits,China Electronics Technology Group Corp,Chongqing 400060,P.R.China)

机构地区：[1]安徽大学电子信息工程学院,合肥230601 [2]阜阳师范学院计算机与信息工程学院,安徽阜阳236037 [3]中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2018年第4期515-519,共5页Microelectronics

基　　金：国家自然科学基金资助项目(61674002);安徽省自然科学基金青年项目(1808085QF209);安徽省高校自然科学研究项目(KJ2017A333)

摘　　要：基于Synopsys公司的3D-TCAD器件仿真软件,在65nm体硅CMOS工艺下研究了场效应晶体管(FET)抗辐射性能与工艺参数的关系,分析了N阱掺杂对单管PMOS单粒子瞬态脉冲(SET)效应的影响。针对PMOS管SET电流的各组分进行了分析,讨论了粒子轰击后器件各端口电流的变化情况。研究结果表明,增大N阱掺杂浓度能有效降低衬底空穴收集量,提升N阱电势,抑制寄生双极放大效应,减少SET脉冲宽度。该研究结果对从工艺角度提升PMOS器件的抗辐射性能有指导意义。Based on Synopsys 3D-TCAD device simulation,the relationship between anti-radiation performance and process parameters of FET had been studied in 65 nm bulk silicon CMOS technology.The N-well doping effect on the single event transient of P-type field-effect transistor had been analyzed.SET current components of each device ports were analyzed and discussed.The influence of N-well doping concentration on SET pulse width and substrate/source had been researched.It was found that increasing the doping concentration of N-well could effectively reduce the substrate hole current by lifting the N-well’s electric potential,which inhibited the effect of parasitic bipolar amplification and then reduced the pulse width of SET.It had important guiding significance for improving the anti-radiation performance of transistors with process adjustment.

关 键 词：PMOS 单粒子瞬态 工艺波动 掺杂浓度 N阱 

分 类 号：TN386[电子电信—物理电子学]