a-IGZO/IZO厚度比对TFT特性的影响研究  

Study on Influence of a-IGZO/IZO Thickness Ratio on TFT Characteristics

作　　者：潘东[1] 向超 殷波[1] 李勇男[1] 汤猛[1] 钟传杰[1] PAN Dong;XIANG Chao;YIN Bo;LI Yongnan;TANG Meng;ZHONG Chuanjie(School of Internet of Things Engineering,Jiangnan University,Wuxi,Jiangsu 214122,P.R.China;SIPPR Engineering Group Co.,Ltd.,Zhengzhou 450007,P.R.China)

机构地区：[1]江南大学物联网工程学院,江苏无锡214122 [2]机械工业第六设计研究院有限公司,郑州450007

出　　处：《微电子学》2018年第4期533-536,547,共5页Microelectronics

基　　金：国家自然科学基金资助项目(60776056)

摘　　要：利用Silvaco TCAD软件中的Atlas模块,对底栅结构的双有源层a-IGZO/IZO薄膜晶体管(TFT)进行了仿真与模拟,研究了双有源层厚度比对TFT特性的影响。结果表明,该TFT的特性与有源层的厚度比密切相关。在给定参数条件下,当有源层的厚度比为20∶20时,该TFT的电学性能最优。阈值电压、亚阈值摆幅分别为-2.05 V、91 mV/decade,最大开关电流比为4.12×1014。双有源层a-IGZO/IZO TFT的场效应迁移率可达20.2cm2/V·s,优于单有源层a-IGZO TFT。The bottom-gate a-IGZO/IZO thin film transistor（TFT）of double active layers was simulated by Atlas module of Silvaco TCAD,and then the influence of the thickness ratio of double active layers on TFT characteristics were studied.The results of the simulation indicated that the TFT characteristics were closely related to the thickness ratio of active layers.Based on the given material parameters,it was found that the electrical properties of TFT could be optimized when the thickness ratio of active layers was 20∶20.The threshold voltage and subthreshold swing were-2.05 V,91 mV/decade respectively,and the maximum switching current ratio was4.12×1014.Especially,the field effect mobility could reach 20.2 cm2/V·s,which was superior to that of the single active layer a-IGZO TFT.

关 键 词：a-IGZO a-IZO 双有源层 异质结 态密度 

分 类 号：TN321.5[电子电信—物理电子学]