利用磁光克尔效应计算材料的介电张量非对角元  

Calculating the non-diagonal elements of dielectric tensor based on magneto-optical Kerr effect

作　　者：曹克 张霞[1] 王玉颖 孙学博 孔祥和[1] CAO Ke;ZHANG Xia;WANG Yu-ying;SUN Xue-bo;KONG Xiang-he(Shandong Province Key Lab of Laser Polarization and Information,College of Physics and Engineering,Qufu Normal University,Qufu 273165,China)

机构地区：[1]曲阜师范大学物理工程学院山东省激光偏光信息重点实验室,山东曲阜273165

出　　处：《物理实验》2018年第9期12-16,20,共6页Physics Experimentation

基　　金：山东省自然科学基金项目(No.ZR2015AM024)

摘　　要：利用磁控溅射的方法制备了Ag和Ag/Co双层薄膜样品.通过椭偏测量和磁光克尔测量,得到薄膜样品的有效光学常量和有效磁光参量,并通过数值分析得到介电张量的非对角元.实验结果表明:用通常公式计算和磁光测量与椭偏测量结合计算非磁样品Ag薄膜的光学常量的结果一致,验证了基于磁光测量方法计算介电张量非对角元的正确性.Ag and Ag/Co bilayer films were fabricated using DC magnetron sputtering.Both the optical properties and the magneto-optical Kerr effect（MOKE）parameters were obtained through ellipsometry and MOKE spectra analysis.Finally,the non-diagonal elements of dielectric tensor were acquired through numerical calculation.Both the related formulas and MOKE and ellipsometry test were validated through the calculation of diagonal elements of non-magnetic material Ag films using regular formula.

关 键 词：磁光克尔效应 光学常量 介电张量非对角元 

分 类 号：O441.6[理学—电磁学] O484.5[理学—物理]