外光电效应中深层电子的逸出功  

Escape Work Function of Inner Electrons in Photoelectric Effect

作　　者：徐子绪 张莹莹[1] 陈畅[1] XU Zi-xu;ZHANG Ying-ying;CHEN Chang(Qingdao Technological University,Shandong Qingdao 26652)

机构地区：[1]青岛理工大学,山东青岛266520

出　　处：《大学物理实验》2018年第4期17-20,共4页Physical Experiment of College

摘　　要：研究了外光电效应实验中表层和深层电子逸出功的实验数据,计算了金属表层电子和相对深层电子的逸出功,并应用经典动力学理论和晶格散射理论对结论进行分析。The escape work function of surface and inner photoelectrons are measured respectively in photoelectric effect experiments.The corresponding escape work function and maximum residual kinetic energy of photoelectrons are achieved.Based on the experimental data,the micro-kinetics descriptions and lattice scattering theory are discussed.

关 键 词：光电效应 表层光电子 深层光电子 逸出功 

分 类 号：O431.2[机械工程—光学工程]