硅溶胶抛光液稳定性及对SiC化学机械抛光的影响  

Stability of Colloidal Silica Polishing Solution and Its Effect on SiC Chemical Mechanical Polishing

作　　者：阎秋生[1] 徐沛杰 路家斌[1] 梁华卓 Yan Qiusheng;Xu Peijie;Lu Jiabin;Liang Huazhuo(School of Electromechanical Engineering,Guangdong University of Technology,Guangzhou 510006,China)

机构地区：[1]广东工业大学机电工程学院

出　　处：《半导体技术》2018年第9期664-668,共5页Semiconductor Technology

基　　金：广东省自然科学基金资助项目(2015A030311044);广东省科技计划项目(2016A010102014);国家自然科学基金资助项目(51375097)

摘　　要：通过在碱性硅溶胶中添加不同的芬顿试剂配制成不同的硅溶胶抛光液,检测其Zeta电位绝对值的大小,研究不同芬顿反应试剂对硅溶胶稳定性的影响,进而探究其稳定性对SiC化学机械抛光的影响。实验结果表明,原硅溶胶和加入H_2O_2的硅溶胶抛光液Zeta电位绝对值分别为45和55.5 mV,稳定性好,抛光后的SiC表面形貌也最好,表面粗糙度分别达到0.500 6和0.464 2 nm;而基于芬顿反应的硅溶胶抛光液Zeta电位绝对值为9.88 mV,稳定性极差,抛光后的SiC表面出现大量划痕并伴有晶体剥落,表面粗糙度达到3.666 4 nm。By adding different Fenton reagents in the alkaline colloidal silica to prepare different colloidal silica polishing solutions,the absolute value of Zeta potential was detected,the effect of different Fenton reaction reagents on the stability of the colloidal silica was studied,and the effect of its stability on SiC chemical mechanical polishing was investigated. The experimental results show that the Zeta potential absolute values of the original colloidal silica and colloidal silica polishing solution containing H_2O_2 are 45 and 55. 5 mV,respectively,indicating the good stability. Besides,the polished SiC has the best surface morphology,and the surface roughness reach 0. 500 6 and 0. 464 2 nm,respectively. However,the absolute value of Zeta potential of the colloidal silica polishing solution based on Fenton reaction is 9. 88 mV with poor stability. The polished SiC surface has many deep scratches and crystals spalling,and the surface roughness is 3. 666 4 nm.

关 键 词：SIC 化学机械抛光(CMP) 硅溶胶 Zeta电位绝对值 表面粗糙度 稳定性 

分 类 号：TN305.2[电子电信—物理电子学] TN304.24