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作 者:康菲菲 周文艳[2] 吴永瑾 杨国祥 孔建稳 裴洪营 Kang Feifei;Zhou Wenyan;Wu Yongjin;Yang Guoxiang;Kong Jianwen;Pei Hongying(State Key Laboratory of Advanced Technologies for Comprehensive Utilization of Platinum Metals,Sino-Platinum Metals Co.,Ltd.,Kunming 650106,China;Kumming Institute of Precious Metals,Kunming 650106,China)
机构地区:[1]贵研铂业股份有限公司稀贵金属综合利用新技术国家重点实验室,昆明650106 [2]昆明贵金属研究所,昆明650106
出 处:《半导体技术》2018年第9期702-707,共6页Semiconductor Technology
基 金:云南省重点研发计划项目(2017IB016);第62批中国博士后科学基金面上自主项目(2017M623316XB)
摘 要:采用固相复合及大塑性拉拔技术制备了线径0.020 mm的金包银复合键合丝,并利用扫描电子显微镜、双束电子显微镜、单轴拉伸实验、电阻率实验、键合实验、线弧挑断实验及焊球推力实验等对其微结构和性能进行表征。结果表明:金包银复合键合丝的复层达到纳米级尺度,在芯材表面均匀连续覆盖,与芯材的界面结合力好。芯材横截面组织为等轴晶,晶粒细小弥散且内部有大量的板条状平行的退火孪晶。金包银复合键合丝具有较高的抗拉强度(230 MPa)和延伸率(15%),其强化机制为界面强化和细晶强化,其电性能受表面/界面以及晶界散射的影响而变差。金包银复合键合线弧形稳定,具有较高的键合可靠性,其挑断力(7.79g)与焊球推力(49.7g)均满足微电子封装技术对键合丝的品质要求。The gold-coated silver composite bonding wire with a wire diameter of 0. 020 mm was prepared by solid-phase composition and severe plastic deformation technology. And its microstructure and property were characterized by scanning electron microscope,double beam electron microscope,uniaxial tensile test,resistivity test,bonding test,wire pulling force test and solder ball thrust force test,etc. The results show that the composite layer of the gold-coated silver composite bonding wire reaches nanometer scale,and covers the core material surface uniformly and continuously. The interfacial bonding force between composite layer and core is good. The cross-section structure of the core material is equiaxed grain.The grain is fine and dispersed with a large number of parallel annealing twins in strip shape inside. The breaking strength( 230 MPa) and elongation( 15%) of the gold-coated silver composite bonding wire are high. Its strengthening mechanism is interface strengthening and fine-grain strengthening, and its electrical properties are degraded by surface/interface and grain boundary scattering. The gold-coated silver composite bonding wire has stable arc shape with high bonding reliability. The wire pulling force( 7. 79 g) and solder ball thrust force( 49. 7 g) can meet the quality requirement of the bonding wire for microelectronic packaging technology.
关 键 词:微电子封装 金包银复合键合丝 退火孪晶 强度 电性能 键合性能
分 类 号:TN305.96[电子电信—物理电子学] TG146.31[一般工业技术—材料科学与工程]
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