忆阻器数字化仿真器的设计与实现  

Design and Implementation of Digital Simulator for Memristor

作　　者：吴杰 王光义[1] 丘嵘[2] 司德成 WU Jie;WANG Guangyi;QIU Rong;SI Decheng(School of Electronic Information,Hangzhou Dianzi University,Hangzhou Zhejiang 310018,China;Guangdong Institute of Science and Technology,Guangzhou Guangdong 510640,China)

机构地区：[1]杭州电子科技大学电子信息学院,浙江杭州310018 [2]广东科学技术职业学院,广东广州510640

出　　处：《杭州电子科技大学学报（自然科学版）》2018年第5期1-6,共6页Journal of Hangzhou Dianzi University：Natural Sciences

基　　金：国家自然科学基金资助项目(61771176;60971046);浙江省自然科学基金重点资助项目(LZ12F01001)

摘　　要：忆阻器是一种新型记忆电阻元件,在非易失性存储器、逻辑计算电路、神经网络和非线性电路等领域中有巨大的应用潜能。目前,忆阻器尚未市场化,为了给忆阻器的研究提供一种替代仿真器,基于数字电位器,设计并实现了一种具有掉电记忆特性的忆阻器硬件仿真器电路。实验测试表明,该仿真器和忆阻器的滞回伏安特性一致,并具有真正的非易失特性,弥补了目前忆阻器仿真器的不足。Memristor is a new type of memory resistive element that has great potential application in the fields of non-volatile memory,logic computing circuits,neural networks and nonlinear circuits.In the situation that the memristor has not been marketized at present,in order to provide an alternative simulator for theory and application of memristor,a digital potentiometer-based memristor with power-down memory is designed and implemented.The experimental results show that the simulator has exactly the same hysteresis loop characteristics as the memristor,and has the real non-volatile characteristic,which makes up for the shortcomings of the current memristor simulator.

关 键 词：忆阻器 非易失性 数字电位器 

分 类 号：TN401[电子电信—微电子学与固体电子学]