Robust photoluminescence energy of MoS_2/graphene heterostructure against electron irradiation  

二硫化钼/石墨烯异质结在电子束辐照轰击下发光能量的鲁棒特性（英文）

作　　者：Shengzhe Hong Deyi Fu Jiwei Hou Duanliang Zhou Bolun Wang Yufei Sun Peng Liu Kai Liu 洪聖哲;傅德颐;侯纪伟;周段亮;王博伦;孙雨飞;柳鹏;刘锴(State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University;Department of Physics, National University of Singapore;Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University)

机构地区：[1]State Key Laboratory of New Ceramics and Fine Processing,School of Materials Science and Engineering,Tsinghua University,Beijing 100084,China [2]Department of Physics,National University of Singapore,2 Science Drive 3,Singapore 117551,Singapore [3]Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center,Tsinghua University,Beijing 100084,China

出　　处：《Science China Materials》2018年第10期1351-1359,共9页中国科学（材料科学（英文版）

基　　金：supported by the National Natural Science Foundation of China (11774191, 51727805, and 51672152);the Open Research Fund Program of the State Key Laboratory of LowDimensional Quantum Physics (KF201603);the Thousand Youth Talents Program of China

摘　　要：Two-dimensional （2D） materials have attracted growing attention since the discovery of graphene [1]. Transition metal dichalcogenide （TMD） semiconductors, such as MoS2 and WS2, became popular materials in recent years, because they usually have intrinsic bandgaps and an in- direct-to-direct bandgap transition from bulk to mono- layer limit [2-6]. Although graphene and TMDs are promising materials in field-effect devices [7-9], their heterostructures are more advanced in charge-splitting functions for the applications in optoelectronic devices [10-15].在许多恶劣的工作环境中,器件难免会曝露在电子束辐照下.对于单原子层厚度的二维材料而言,电子束辐照经常会造成其本征性能的衰减.如何避开这一影响对于多功能化的二维异质结器件来讲至关重要.然而,电子束辐照对于二维异质结的影响至今仍缺乏充分深入的研究.本工作发现利用异质结的堆垛可以阻碍单层二硫化钼(MoS_2)由于电子束辐照带来的性能衰退.通过在MoS_2与基底之间插入单层石墨烯,在同样剂量的电子束辐照轰击下,异质结区域的光致发光强度始终大于纯单层MoS_2;而且与纯单层区域明显的发光能量变化相比,MoS_2/石墨烯异质结区域的发光能量具有更佳的稳定性.这一现象归因于石墨烯的阻隔效应:由于单层石墨烯的存在抑制了基板对MoS_2的影响.此外,我们也系统地揭示了电子束辐照对MoS_2/石墨烯异质结拉曼光谱及电学传输特性的影响.本工作不仅有助于加深人们对二维异质结辐照效应的认知,同时也为新型抗辐射器件的设计开辟了新的途径.

关 键 词：异质结器件 电子束辐照 二硫化钼 光能量 石墨 鲁棒特性 MOS2 二维材料 

分 类 号：TB34[一般工业技术—材料科学与工程] TN386[电子电信—物理电子学]