隧穿场效应晶体管的研究进展  

Research Progress of Tunnel Field-Effect Transistors

作　　者：陶桂龙 许高博[1,2] 殷华湘 徐秋霞[1,2] Tao Guilong;Xu Gaobo;Yin Huaxiang;Xu Qiuxia(Key Laboratory of Microelectronics Devices ＆ Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Bejing 100029, China;University of Chinese Academy of Sciences, Beijing 100049, China)

机构地区：[1]中国科学院微电子研究所微电子器件与集成技术重点实验室,北京100029 [2]中国科学院大学,北京100049

出　　处：《微纳电子技术》2018年第10期707-718,共12页Micronanoelectronic Technology

基　　金：中国科学院微电子器件与集成技术重点实验室开放课题

摘　　要：隧穿场效应晶体管（TFET）已成为低压低功耗半导体器件的一个重要发展方向，但是自身存在的问题使其目前难以在实际电路设计中得到大量应用，主要原因之一是其开态电流过小。对隧穿场效应晶体管进行了简要介绍，从其隧穿几率等方面对器件的优化进行了分析。并综述了隧穿场效应晶体管的研究进展，包括基于传统Ⅳ族材料、Ⅲ-Ⅴ族材料以及GeSn材料等的隧穿场效应晶体管，并对基于负电容效应的铁电隧穿场效应晶体管进行了简要分析与介绍。然后，对隧穿场效应晶体管的改良与优化方向进行了简单总结，研究表明采用新材料或新结构的器件可极大地改善隧穿场效应晶体管的电学性能。The tunneling field-effect transistor （TFET） has become an important development di- rection of the low-voltage and low-power consumption semiconductor devices, while it is difficult to be widely applied in the actual circuit designs because of its own problems, one of the main rea- sons is that its on-state current is too small. Firstly, the TFET is briefly introduced, and the de- vice optimization is analyzed from the aspects of its tunneling transmission probability and so on. Furthermore, the research progress of the TFET is reviewed, including the TFET based on tra- ditional Ⅳ group materials, Ⅲ-Ⅴ group materials and GeSn materials. Meanwhile, the ferroelec- tric TFET based on the negative capacitance effect is briefly analyzed and introduced. Then, the improvement and optimization direction of the TFET are briefly summarized. The research re- sults show that the electrical properties of the TFET can be greatly improved by using new mate- rials or new structures.

关 键 词：低功耗器件 隧穿场效应晶体管(TFET) 开态电流 开关电流比 亚阈值摆幅 

分 类 号：TN386[电子电信—物理电子学]