PLD法制备ZnO薄膜的微观结构分析  

Analysis on Microstructure of ZnO Films Prepared by PLD

作　　者：孙彦清[1] 娄本浊[1] SUN Yanqing;LOU Benzhuo(School of Physics and Telecommunication Engineering,Shaanxi University of Technology,Hanzhong 723000,China)

机构地区：[1]陕西理工大学物理与电信工程学院

出　　处：《热加工工艺》2018年第16期146-150,共5页Hot Working Technology

基　　金：国家自然科学基金资助项目(41105107);陕西省教育厅科学研究计划基金资助项目(2013JK0617)

摘　　要：采用脉冲激光沉积法在玻璃基板上制备Zn O薄膜。利用XRD与SEM分析脉冲能量与基板温度对薄膜微观结构的影响。结果表明：脉冲强度为100 m J时,轰击下来的颗粒数量与尺寸适于沉积出（002）面结晶强度最大的Zn O薄膜;基板温度为300℃时,Zn O薄膜表面呈颗粒状堆叠形貌,且具有良好的（002）面择优取向。在脉冲强度100 m J、基板温度300℃及沉积时间3 h下以脉冲激光沉积法在玻璃基板上成长所得的Zn O薄膜的结晶效果最佳。Zn O films were prepared on glass substrates by pulsed laser deposition（PLD） and the effects of pulse energy and substrate temperature on the microstructure of the prepared films were analyzed by XRD and SEM. The results show that the number and size of particles bombarded at the pulse intensity of 100 m J are suitable for depositing Zn O films with the largest（002） peak intensity. The surface of Zn O films shows a granular stacking morphology at the substrate temperature of300 ℃, and the Zn O film has good（002） preferred orientation. The Zn O film with best crystallization can be prepared on the glass substrate by pulsed laser deposition with the pulse intensity of 100 m J, substrate temperature of 300 ℃ and deposition time of 3 h.

关 键 词：ZNO薄膜 脉冲激光沉积 微观结构 脉冲强度 基板温度 

分 类 号：TG174.442[金属学及工艺—金属表面处理]