SiC籽晶上生长AlN单晶的断裂特性研究  

Research on Fracture Characteristics of AlN Crystal Grown on SiC Seed

作　　者：张丽[1] 齐海涛[1] 徐世海[1] 金雷[1] 史月增[1] ZHANG Li;QI Haitao;XU Shihai;JIN Lei;SHI Yuezeng(The 46th Institute of China Electronics Technology Corporation,Tianjin 300220,China)

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《压电与声光》2018年第5期772-775,共4页Piezoelectrics & Acoustooptics

基　　金：高质量AlN单晶衬底制备关键技术资助项目(2017YFB0404103);天津市人才发展特殊支持计划高层次创新创业团队基金资助项目

摘　　要：通过扫描电镜(SEM)观察了SiC籽晶上生长AlN单晶的断裂面形貌。模拟了SiC籽晶与AlN晶体之间的应力分布。通过计算不同晶面的面间距,确定了六方晶系的AlN晶体中m面为解理面。拉曼光谱仪对不同晶面的特性进行了表征。结果表明,断裂面为m面,即裂纹扩展并沿m面解理形成断裂面。切割面为c面,AlN沿垂直于c方向生长。拉曼光谱中波数为656.2cm-1的(E2(high)声子模为AlN单晶中的特征拉曼峰)声子模式的半高宽为6.5cm-1,晶体质量高。残余的张应力是裂纹产生的主要原因。The fracture surface morphology of AlN single crystal grown on SiC seed crystal was observed by scanning electron microscopy（SEM）.The stress distribution between the SiC seed crystal and the AlN crystal was simulated.By calculating the interplanar spacing of different crystal faces,the m-plane in the hexagonal AlN crystal was determined as the cleavage plane.The features of different crystal planes were characterized by Raman spectroscopy.The results showed that the fracture plane was m-plane,that is,the crack expanded and cleaved along the mplane to form a fracture surface.The cutting planes were the c-plane,that is,the AlN was grown along the direction perpendicular to the c-axis.The FWHM value of E2（high）phonon mode corresponding to wavenumber of656.2 cm^-1 in Raman spectra was 6.5 cm^-1,indicating that the crystalline qualitywas high.The residual tensile stress was the main cause of cracking.

关 键 词：AlN单晶 断裂面 解理 裂纹 应力 

分 类 号：TN304.2[电子电信—物理电子学]