衬底温度对共溅射制备AZO薄膜光电性能影响  

Effect of Substrate Temperature on Photoelectric Properties of Magnetron Co-sputted AZO Thin Films

作　　者：何双赐 钟志成 汪竞阳 魏彦锋 HE Shuangci;ZHONG Zhicheng;WANG Jingyang;WEI Yanfeng(School of Physics and Electronic Engineering,IIubei University of Arts and Science,Xiangyang 441053,China;School of Materials and Metallurgy,Wuhan University of Science and Technology,Wuhan 430031,China)

机构地区：[1]湖北文理学院物理与电子工程学院,湖北襄阳441053 [2]武汉科技大学材料与冶金学院,湖北武汉430081

出　　处：《压电与声光》2018年第5期784-788,共5页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(51302075;61302004);湖北省自然科学基金重点资助项目(ZRZ2015000203)

摘　　要：以Al金属和ZnO陶瓷作为溅射靶材,采用直流和射频双靶磁控共溅射的方法在玻璃衬底上制备Al掺杂ZnO(AZO)透明导电薄膜,采用X线光电子能谱仪、X线衍射(XRD)仪、扫描电子显微镜、原子力显微镜、紫外-可见分光光度计和霍耳效应测试仪对薄膜的微观形貌结构及光电性能进行了表征和分析,探究了不同衬底温度对薄膜光电性能的影响。结果表明,所制备的AZO薄膜均具有c轴取向生长的六角纤锌矿结构,在衬底温度为300℃时AZO薄膜结晶质量最好,电阻率最低(为1.43×10-3Ω·cm)。所有样品薄膜在380~780nm区间平均透过率大于90%,随着衬底温度的升高,AZO薄膜的吸收边出现了蓝移。The transparent and conductive Al-doped ZnO（AZO）thin films were prepared on glass substrate by using Al and ZnO ceramics as the sputtering targets by DC and RF dual-target magnetron co-sputtering.The influence of substrate temperature on microstructure and photoelectric properties of AZO thin films were characterized and analyzed by X-ray photoelectron spectroscopy,X-ray diffraction,scanning electron microscope,atomic force microscope,ultraviolet spectrophotometer and Hall Effect measurement instrument,and the effects of different substrate temperature on the photoelectric properties of AZO thin film have been investigated.The results show that the prepared AZO thin films have hexagonal crystal structure with c-axis orientation.The AZO thin film has the best crystalline quality at a substrate temperature of 300℃,and the resistivity is at least 1.43×10^-3Ω·cm.The average optical transmittance of all the sample thin films are over 90%in the range of 380-780 nm.The absorption edge of AZO thin films appears blue shift with the increase of substrate temperature.

关 键 词：Al掺杂ZnO(AZO)薄膜 共溅射 衬底温度 光电性能 蓝移 

分 类 号：TN304.2[电子电信—物理电子学]