金属掺杂ITO透明导电薄膜的制备及应用  

Fabrication and Application of Metal-Doped ITO Transparent Conductive Thin Film

作　　者：文如莲 胡晓龙[1] 梁思炜 王洪[1,2] WEN Ru-lian;HU Xiao-long;LIANG Si-wei;WANG Hong(Engineering Research Center for Optoeleetronics of Guangdong Province,School of Physics and Optoelectronics,South China University of Technology,Guangzhou 510640,China;Zhongshan Institute of Modern Industrial Technology,South China University of Technology,Zhongshan 528437,China)

机构地区：[1]华南理工大学广东省光电工程技术研究开发中心,物理与光电学院,广东广州510640 [2]中山市华南理工大学现代产业技术研究院,广东中山528437

出　　处：《光学与光电技术》2018年第5期42-47,共6页Optics & Optoelectronic Technology

基　　金：广东省科技计划项目(2015B010127013、2016B010123004、2017B010112003);广州市科技计划项目(201504291502518、201604046021);中山市科技发展专项(2017F2FC002、2017A1007);贵州省科技厅、贵州民族大学联合基金([2015]7221)资助项目

摘　　要：研究制备了一种新型金属掺杂ITO透明导电薄膜。通过研究掺杂不同的金属及不同的金属厚度,对比在500℃和600℃退火条件下的透过率和方块电阻变化,并利用这种掺杂的ITO薄膜制备成14mil×28mil正装395nm UV LED芯片。利用电致发光(EL)设备对LED光电性能进行测试以及对比。实验结果表明:掺3nm金属Al和Ti的ITO薄膜在600℃退火后方块电阻最大降低6.2Ω/,透过率在395nm处最大达91.2%。在120mA注入电流下,395nmLED电压降低0.5V,功率提升19.7%。ITO薄膜掺杂金属能够影响薄膜性能,提升紫光LED光电性能。A novel metal-doped ITO transparent conductive thin film is proposed. By studying different doped metals and different metal thickness, the transmittance and sheet resistance are compared under the annealing temperature at 500 ℃ and 600 ℃, and the 14 mil × 28 mil normal 395 nm UV LED chips are fabricated by using the metal-doped ITO thin films. The photoelectric properties of LEDs are tested and compared by using electroluminescent（EL） equipment. The experimental results show that after annealing at 600 ℃, the sheet resistance of ITO films doped with 3 nm A1 and Ti decreases by 6.2 Ω/□ and the transmittance reaches 91. 2% at 395 nm. The voltage of 395 nm UV LED decreases by 0. 5 V and the output power increases by 19. 7% under the 120 mA injection current. Doping metal into ITO thin film can affect the film performance and improve the photoelectric performance of UV LED.

关 键 词：导电薄膜 掺金属 退火 395nm紫外LED 薄膜性能 

分 类 号：O484.41[理学—固体物理]