H2Se气态硒化后退火温度对CIGS薄膜中Ga再分布的影响  

INFLUENCE OF ANNEALING TEMPERATURE ON Ga REDISTRIBUTION IN CIGS THIN FILMS FABRICATED BY H2Se SELENIZATION

作　　者：黄勇亮[1,2] 孟凡英[1,2] 沈文忠[1] 吴敏[3] 刘正新[2] Huang Yongliang1,2, Meng Fanying1,2, Shen Wenzhong1, Wu Min3, Liu Zhengxin2(1. School of Physics and Astronomy, ShanghaiJiao Tong University, Shanghai 200240, China ; 2. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 201800, China ; 3. Shanghai Institute of Space Power-Sources, Shanghai 200233, China)

机构地区：[1]上海交通大学天文与物理系,上海200240 [2]中国科学院上海微系统与信息技术研究所,上海201800 [3]上海空间电源研究所,上海200233

出　　处：《太阳能学报》2018年第9期2585-2590,共6页Acta Energiae Solaris Sinica

基　　金：航天先进技术联合研究中心技术创新项目(13GFZ-JJ08-034)

摘　　要：采用H2Se气体在400℃下对溅射的Cu-In-Ga金属预制层进行硒化处理制备CIGS薄膜，然后采用原位退火的方法改善Ga元素在CIGS薄膜内的纵向分布和薄膜内的晶粒尺寸，研究退火温度对CIGS薄膜表面Ga元素含量和结晶性的影响。CIGS薄膜中Ga元素的分布决定薄膜的禁带宽度和太阳电池的开路电压，通过优化退火温度，CIGS太阳电池的转换效率相对增益达到20％，最终达到14．39％的转换效率和590mV的开路电压。CIGS thin films are fabricated by selenizing the sputtered Cu-In-Ga precursors in H2Se gas at 400 ℃, then the CIGS films are in situ annealed to improve Ga distribution and crystallinity in the films. The influence of the annealing temperature on Ga content near the front surface of the CIGS films is studied. Simultaneously, the crystallinity of the CIGS thin films is also effected by the annealing temperature. The band gap of CIGS is controlled by the Ga content, so the conversion efficiency is increased by 20% through optimizing the annealing temperature, reaching 14.39% with open circuit voltage of 590 mV.

关 键 词：H2Se硒化 退火温度 Ga再分布 晶粒生长 CIGS薄膜 

分 类 号：TM914.42[电气工程—电力电子与电力传动]