1 550 nm long-wavelength vertical-cavity surface emitting lasers  

作　　者：LIU Li-jie WU Yuan-da WANG Yue AN Jun-ming HU Xiong-wei 刘丽杰;吴远大;王玥;安俊明;胡雄伟(State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences;College of Material Science and Optoelectronic Technology,University of Chinese Academy of Sciences)

机构地区：[1]State Key Laboratory of Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China [2]College of Material Science and Optoelectronic Technology,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Optoelectronics Letters》2018年第5期342-345,共4页光电子快报（英文版）

基　　金：supported by the National High Technology and Development Program of China(No.2015AA016902)

摘　　要：A 1 550 nm long-wavelength vertical cavity surface emitting laser （VCSEL） on InP substrate is designed and fabri- cated. The transfer matrix is used to compute reflectivity spectrum of the designed epitaxial layers. The epitaxial layers mainly consist of 40 pairs of n-AlxGayIn（l-x-y）As/InP, and 6 strain compensated AlxGayln（l-x-y）As/InP quantum wells on n-InP substrate, respectively. The top distributed Bragg reflection （DBR） mirror system has been formed by fabricat- ing 4.5 pairs of SiO2/Si. The designed cavity mode is around 1 536 nm. The dip of the fabricated cavity mode is around 1 530 nm. The threshold current is 30 mA and the maximum output power is around 270 μW under CW opera- tion at room temperature.

关 键 词：长波长 表面 垂直 激光 发射极 SIO2/SI 计算设计 取向附生 

分 类 号：TN248[电子电信—物理电子学]